IXXH75N60B3 IXYS, IXXH75N60B3 Datasheet - Page 2

• Manufacturer Part Number: IXXH75N60B3
• Description: XPT 600V
• Manufacturer: IXYS

Specifications of IXXH75N60B3

• Vces, (v): 600
• Ic25, Tc = 25°c, Igbt, (a): 160
• Ic90, Tc = 90°c, Igbt, (a): -
• Ic110, Tc = 110°c, Igbt, (a): 75
• Vce(sat), Typ, Tj = 25°c, Igbt (v): 1.85
• Tfi, Typ, Tj = 25°c, Igbt, (ns): 125
• Eoff, Typ, Tj = 125°c, Igbt (mj): -
• Eoff, Typ, Tj = 150°c, Igbt (mj): 2.2
• Rthjc, Max, Igbt (c/w): 0.20
• If, Tc = 90°c, Diode (a): -
• If, Tc = 110°c, Diode (a): -
• Rthjc, Max, Diode (k/w): -

Symbol Test Conditions
(T
g
C
C
C
Q
Q
Q
t
t
E
t
t
E
t
t
E
t
t
E
R
R
Notes:
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
d(on)
ri
d(off)
fi
d(on)
ri
d(off)
fi
fs
ie
oes
res
on
of
on
off
thJC
thCS
g(on)
ge
gc
J
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
s
f
= 25°C Unless Otherwise Specified)
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Switching times & energy losses may increase for higher V
V
I
Inductive load, T
I
V
Note 2
Inductive load, T
I
V
Note 2
I
C
C
C
C
CE
CE
CE
= 75A, V
= 60A, V
= 60A, V
= 60A, V
= 25V, V
= 400V, R
= 400V, R
ADVANCE TECHNICAL INFORMATION
GE
GE
GE
CE
GE
= 15V, V
= 15V
= 15V
= 10V, Note 1
G
G
= 0V, f = 1MHz
= 5
= 5
4,835,592
4,881,106
J
J
Ω
Ω
= 25°C
= 150°C
CE
= 0.5 • V
4,931,844
5,017,508
5,034,796
CES
5,049,961
5,063,307
5,187,117
Characteristic Values
20
Min.
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
3290
0.21
Typ.
195
107
118
125
145
170
1.7
1.5
2.6
2.2
32
63
30
48
35
75
36
72
CE
(clamp), T
Max.
0.20 °C/W
160
2.1
6,404,065 B1
6,534,343
6,583,505
J
°C/W
or R
mJ
mJ
mJ
mJ
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
ns
S
G
.
6,683,344
6,710,405 B2 6,759,692
6,710,463
TO-247 (IXXH) Outline
Terminals: 1 - Gate
6,727,585
6,771,478 B2 7,071,537
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
∅P
Q
R
S
1
2
1
2
IXXH75N60B3
20.80
15.75
19.81
1.65
2.87
5.20
3.55
5.89
4.32
6.15 BSC
Min.
Millimeter
4.7
2.2
2.2
1.0
3 - Emitter
1
.4
7,005,734 B2
7,063,975 B2
2
21.46
16.26
20.32
Max.
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
3
5.3
2.6
1.4
.8
e
2 - Collector
0.205 0.225
0.232 0.252
∅ P
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
Min.
242 BSC
Inches
7,157,338B2
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216