IXYA8N90C3D1 IXYS, IXYA8N90C3D1 Datasheet

no-image

IXYA8N90C3D1

Manufacturer Part Number
IXYA8N90C3D1
Description
XPT 900V
Manufacturer
IXYS
Datasheet

Specifications of IXYA8N90C3D1

Vces, (v)
900
Ic25, Tc = 25°c, Igbt, (a)
20
Ic90, Tc = 90°c, Igbt, (a)
-
Ic110, Tc = 110°c, Igbt, (a)
8
Vce(sat), Typ, Tj = 25°c, Igbt (v)
2.5
Tfi, Typ, Tj = 25°c, Igbt, (ns)
130
Eoff, Typ, Tj = 125°c, Igbt (mj)
0.22
Eoff, Typ, Tj = 150°c, Igbt (mj)
-
Rthjc, Max, Igbt (c/w)
1.2
If, Tc = 90°c, Diode (a)
-
If, Tc = 110°c, Diode (a)
12
Rthjc, Max, Diode (k/w)
2.5
Package Style
TO-263
900V XPT
GenX3
High-Speed IGBT
for 20-50 kHz Switching
Symbol
V
V
V
V
I
I
I
I
I
E
SSOA
(RBSOA)
P
T
T
T
T
T
M
F
Weight
Symbol
(T
BV
V
I
I
V
© 2012 IXYS CORPORATION, All Rights Reserved
C25
C110
F110
CM
A
CES
GES
J
JM
stg
L
SOLD
C
CES
CGR
GES
GEM
AS
C
GE(th)
CE(sat)
d
J
CES
= 25°C, Unless Otherwise Specified)
TM
TO-263
TO-220
Clamped Inductive Load
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
T
V
T
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque (TO-220)
Mounting Force (TO-263)
Test Conditions
I
V
V
I
I
C
C
C
J
J
C
C
C
C
C
C
C
GE
CE
CE
w/Diode
= 110°C
= 25°C to 175°C
= 25°C to 175°C, R
= 25°C
= 110°C
= 25°C, 1ms
= 25°C
= 25°C
= 25°C
= 15V, T
TM
= 250μA, V
= V
= 0V, V
= 8A, V
= 250μA, V
CES
IGBTs
, V
GE
GE
VJ
GE
= ±20V
= 15V, Note 1
= 150°C, R
= 0V
CE
GE
= V
= 0V
GE
GE
= 1MΩ
G
Preliminary Technical Information
= 30Ω
T
T
J
J
= 125°C
= 125°C
IXYA8N90C3D1
IXYP8N90C3D1
10..65 / 2.2..14.6
Min.
950
Characteristic Values
3.5
@V
-55 ... +175
-55 ... +175
Maximum Ratings
CE
I
1.13/10
CM
2.15
2.60
Typ.
= 16
±20
±30
V
125
175
300
260
900
900
2.5
3.0
48
15
12
CES
20
4
8
±100
Max.
2.50
400
Nm/lb.in.
6.0
60
N/lb.
mJ
μA
μA
nA
°C
°C
°C
°C
°C
W
V
V
V
V
V
A
A
A
A
A
V
V
V
A
g
g
V
I
V
t
Features
Advantages
Applications
TO-263 AA (IXYA)
TO-220AB (IXYP)
G = Gate
E = Emitter
C110
fi(typ)
Optimized for Low Switching Losses
Square RBSOA
Positive Thermal Coefficient of
Anti-Parallel Ultra Fast Diode
Avalanche Rated
International Standard Packages
High Power Density
Low Gate Drive Requirement
High Frequency Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
Vce(sat)
CES
CE(sat)
G
C E
= 900V
= 8A
= 130ns
≤ ≤ ≤ ≤ ≤ 2.5V
G
E
C
Tab = Collector
C (Tab)
C (Tab)
= Collector
DS100400A(03/12)

Related parts for IXYA8N90C3D1

IXYA8N90C3D1 Summary of contents

Page 1

... CES CE CES GE = ±20V 0V, V GES 8A 15V, Note 1 CE(sat © 2012 IXYS CORPORATION, All Rights Reserved Preliminary Technical Information IXYA8N90C3D1 IXYP8N90C3D1 Maximum Ratings 900 = 1MΩ 900 GE ±20 ± 30Ω ≤ ...

Page 2

... J 7.5 /dt = 200A/μ 100° 100°C 114 J (clamp 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXYA8N90C3D1 IXYP8N90C3D1 TO-263 Outline Max Dim. Millimeter ns Min. Max ...

Page 3

... T = 25º 16A IXYA8N90C3D1 IXYP8N90C3D1 Fig. 2. Extended Output Characteristics @ Volts CE Fig. 4. Dependence of V Junction Temperature V = 15V 16A -50 - Degrees Centigrade J Fig ...

Page 4

... C oes res Fig. 11. Maximum Transient Thermal Impedance Fig. 11. Maximum Transient Thermal Impedance aaaa 0.001 0.01 Pulse Width - Seconds IXYA8N90C3D1 IXYP8N90C3D1 Fig. 8. Gate Charge V = 450V 10mA NanoCoulombs G Fig. 10. Reverse-Bias Safe Operating Area T = 150º ...

Page 5

... 15V G GE 180 V = 450V 80 CE 160 70 140 60 120 50 100 IXYA8N90C3D1 IXYP8N90C3D1 Fig. 13. Inductive Switching Energy Loss vs. Collector Current - - - - E E off on Ω 15V 450V 125º 25º ...

Page 6

... IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 70 100 16A 210 240 270 300 18.5 18.0 17.5 17.0 16.5 16.0 15.5 15.0 100 125 IXYA8N90C3D1 IXYP8N90C3D1 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current d(on Ω 15V 450V 125º 25º ...

Page 7

... Fig. 21. Forward current Fig. 24. Fig. 27. Transient thermal resistance junction to case © 2012 IXYS CORPORATION, All Rights Reserved Fig. 22. F Fig. 25. IXYA8N90C3D1 IXYP8N90C3D1 Fig. 23. Fig. 26. ...

Related keywords