IXYA8N90C3D1 IXYS, IXYA8N90C3D1 Datasheet - Page 4

• Manufacturer Part Number: IXYA8N90C3D1
• Description: XPT 900V
• Manufacturer: IXYS

Specifications of IXYA8N90C3D1

• Vces, (v): 900
• Ic25, Tc = 25°c, Igbt, (a): 20
• Ic90, Tc = 90°c, Igbt, (a): -
• Ic110, Tc = 110°c, Igbt, (a): 8
• Vce(sat), Typ, Tj = 25°c, Igbt (v): 2.5
• Tfi, Typ, Tj = 25°c, Igbt, (ns): 130
• Eoff, Typ, Tj = 125°c, Igbt (mj): 0.22
• Eoff, Typ, Tj = 150°c, Igbt (mj): -
• Rthjc, Max, Igbt (c/w): 1.2
• If, Tc = 90°c, Diode (a): -
• If, Tc = 110°c, Diode (a): 12
• Rthjc, Max, Diode (k/w): 2.5
• Package Style: TO-263

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
1,000
0.01
100
0.1
10
10
0.00001
1
3
1
8
7
6
5
4
3
2
1
0
0
0
f
= 1 MHz
2
5
4
10
6
Fig. 7. Transconductance
0.0001
Fig. 9. Capacitance
15
8
V
I
C
CE
10
- Amperes
- Volts
20
12
25
14
Fig. 11. Maximum Transient Thermal Impedance
Fig. 11. Maximum Transient Thermal Impedance
0.001
16
30
T
J
C oes
C ies
C res
= - 40ºC
18
25ºC
150ºC
35
20
Pulse Width - Seconds
40
22
aaaa
0.01
16
14
12
10
18
16
14
12
10
8
6
4
2
0
8
6
4
2
0
200
0
T
R
dv / dt < 10V / ns
V
I
I
J
G
C
G
CE
= 150ºC
= 30
= 8A
= 10mA
= 450V
300
2
Fig. 10. Reverse-Bias Safe Operating Area
Ω
0.1
400
4
Fig. 8. Gate Charge
Q
500
G
- NanoCoulombs
6
V
CE
- Volts
600
8
IXYA8N90C3D1
IXYP8N90C3D1
1
700
10
800
12
900
10
14