IXA55I1200HJ IXYS, IXA55I1200HJ Datasheet

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IXA55I1200HJ

Manufacturer Part Number
IXA55I1200HJ
Description
XPT 1200V
Manufacturer
IXYS
Datasheet
1.IXA55I1200HJ.pdf (5 pages)

Specifications of IXA55I1200HJ

Vces, (v)
1200
Ic25, Tc = 25°c, Igbt, (a)
84
Ic90, Tc = 90°c, Igbt, (a)
54
Ic110, Tc = 110°c, Igbt, (a)
-
Vce(sat), Typ, Tj = 25°c, Igbt (v)
1.8
Tfi, Typ, Tj = 25°c, Igbt, (ns)
100
Eoff, Typ, Tj = 125°c, Igbt (mj)
-
Eoff, Typ, Tj = 150°c, Igbt (mj)
5.5
Rthjc, Max, Igbt (c/w)
0.43
If, Tc = 90°c, Diode (a)
-
If, Tc = 110°c, Diode (a)
-
Rthjc, Max, Diode (k/w)
-
Package Style
ISOPLUS247
XPT IGBT
Single IGBT
Part number
IXA55I1200HJ
● Easy paralleling due to the positive temperature
● Rugged XPT design (Xtreme light Punch Through)
● Thin wafer technology combined with the XPT design
Symbol
V
V
I
P
I
I
V
V
Q
t
t
t
t
E
E
RBSOA
SCSOA
t
I
R
IXYS reserves the right to change limits, conditions and dimensions.
© 2009 IXYS all rights reserved
Features / Advantages:
I
IGBT
C25
C90
GES
SC
SC
CES
d(on)
d(off)
r
f
CES
GES
tot
CE(sat)
GE(th)
on
off
coefficient of the on-state voltage
results in:
- short circuit rated for 10 µsec.
- very low gate charge
- low EMI
- square RBSOA @ 3x Ic
results in a competitive low VCE(sat)
thJC
Gon
Collector emitter saturation voltage
Total gate charge
Turn-on delay time
Current rise time
Turn-off delay time
Current fall time
Turn-off energy per pulse
Short circuit duration
Definition
Collector emitter voltage
Maximum DC gate voltage
Collector current
Total power dissipation
Collector emitter leakage current
Gate emitter leakage current
Gate emitter threshold voltage
Turn-on energy per pulse
Reverse bias safe operation area
Short circuit safe operation area
Short circuit current
Thermal resistance juntion to case
V
V = V
V
I =
I =
V
Inductive load
V
V
V
V
V
R =
Conditions
C
C
GE
CE
CE
CE
GE
CEK
CE
CE
GE
G
= 0 V
= 0 V; V = ±20 V
=
=
= ±15 V; R =
=
=
55
=
Applications:
● AC motor drives
● Solar inverter
● Medical equipment
● Uninterruptible power supply
● Air-conditioning systems
● Welding equipment
● Switched-mode and resonant-mode
● Inductive heating, cookers
600
600
Data according to IEC 60747and per diode unless otherwise specified
1200
900
CES
2
power supplies
15
A; V =
15
mA; V
Ω
V; V
V; I =
; V = 0 V
V;
V; V = ±15 V
GE
GE
; non-repetitive
V
GE
C
GE
GE
G
R =
GE
15
G
=
= V
50
15
15
V
CE
A
15
Ω
V; I =
Ω
(G) 1
C
50
A
(C) 2
(E) 3
T
T
T
T
T
T
T
T
T
T
T
T
VJ
VJ
C
C
VJ
VJ
VJ
VJ
VJ
VJ
VJ
VJ
= 25°C
=
= 125°C
= 25°C
= 25°C
= 25°C
= 90°C
= 25°C
=
= 25°C
=
= 125°C
125
125
125
● Housing: ISOPLUS247
●rIndustry standard outline
●rDCB isolated backside
●rIsolation Voltage 3000 V
●rEpoxy meets UL 94V-0
●rRoHS compliant
I
V
V
Package:
°C
°C
°C
C25
CES
CE(sat)typ
IXA55I1200HJ
min.
5.5
R a t i n g s
=
=
=
typ.
190
250
100
0.1
1.8
2.1
4.5
5.5
70
40
6
1200
max.
preliminary
1200
1.8 V
0.43
290
500
150
200
±20
84
0.1
2.1
6.5
84
54
10
20090409
A
V
Unit
K/W
mA
mA
mJ
mJ
nC
nA
ns
ns
ns
ns
µs
W
V
V
A
A
V
V
V
A
A

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IXA55I1200HJ Summary of contents

Page 1

... 1200 V CEK V = 900 ± Ω non-repetitive G Data according to IEC 60747and per diode unless otherwise specified IXA55I1200HJ preliminary C25 1200 CES V 1 CE(sat)typ Package: ● Housing: ISOPLUS247 ●rIndustry standard outline ●rDCB isolated backside ●rIsolation Voltage 3000 V ● ...

Page 2

... IXYS all rights reserved Conditions T = 25° ° 600 / A/µ Data according to IEC 60747and per diode unless otherwise specified IXA55I1200HJ preliminary Ratings min. typ. max. n/a n 25°C n 125 °C n/a VJ n/a n 125 °C VJ ...

Page 3

... Die Gehäuseabmessungen entsprechen dem Typ TO-247 AD gemäß JEDEC außer Schraubloch und L This drawing will meet all dimensions requiarement of JEDEC outline TO-247 AD except screw hole and except L Data according to IEC 60747and per diode unless otherwise specified IXA55I1200HJ Ratings min. typ. -55 -55 0 ...

Page 4

... Fig. 5 Typ. switching energy vs. collector current IXYS reserves the right to change limits, conditions and dimensions. © 2009 IXYS all rights reserved = 125° off 100 120 Data according to IEC 60747and per diode unless otherwise specified IXA55I1200HJ 100 125°C VJ ...

Page 5

... IXYS reserves the right to change limits, conditions and dimensions. © 2009 IXYS all rights reserved 1 Z thJC 0.1 [K/W] 0.01 0.001 0.01 Fig. 8 Typ. transient thermal impedance Data according to IEC 60747and per diode unless otherwise specified IXA55I1200HJ preliminary 0 [s] p 20090409 ...

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