IXA55I1200HJ IXYS, IXA55I1200HJ Datasheet - Page 5

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IXA55I1200HJ

Manufacturer Part Number
IXA55I1200HJ
Description
XPT 1200V
Manufacturer
IXYS
Datasheet

Specifications of IXA55I1200HJ

Vces, (v)
1200
Ic25, Tc = 25°c, Igbt, (a)
84
Ic90, Tc = 90°c, Igbt, (a)
54
Ic110, Tc = 110°c, Igbt, (a)
-
Vce(sat), Typ, Tj = 25°c, Igbt (v)
1.8
Tfi, Typ, Tj = 25°c, Igbt, (ns)
100
Eoff, Typ, Tj = 125°c, Igbt (mj)
-
Eoff, Typ, Tj = 150°c, Igbt (mj)
5.5
Rthjc, Max, Igbt (c/w)
0.43
If, Tc = 90°c, Diode (a)
-
If, Tc = 110°c, Diode (a)
-
Rthjc, Max, Diode (k/w)
-
Package Style
ISOPLUS247
IXA55I1200HJ
preliminary
1
Z
thJC
0.1
[K/W]
0.01
0.001
0.01
0.1
1
10
t
[s]
p
Fig. 8 Typ. transient thermal impedance
IXYS reserves the right to change limits, conditions and dimensions.
20090409
Data according to IEC 60747and per diode unless otherwise specified
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