IXGH24N60C4D1 IXYS, IXGH24N60C4D1 Datasheet - Page 6

• Manufacturer Part Number: IXGH24N60C4D1
• Description: High-Frequency Range (>40khz), C-IGBT w/Diode
• Manufacturer: IXYS

Specifications of IXGH24N60C4D1

• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 56
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 24
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.7
• Tfi, Typ, Tj=25°c, Igbt, (ns): 68
• Eoff, Typ, Tj=125°c, Igbt, (mj): 0.5
• Rthjc, Max, Igbt, (°c/w): 0.65
• If, Tj=110°c, Diode, (a): 18
• Rthjc, Max, Diode, (ºc/w): 1.6
• Package Style: TO-247

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
130
110
160
140
120
100
90
70
50
30
10
80
60
40
20
0
25
10
Fig. 18. Inductive Turn-on Switching Times vs.
Fig. 20. Inductive Turn-on Switching Times vs.
t
R
V
t
T
V
r i
G
CE
35
r i
J
CE
20
= 125ºC, V
= 10
= 360V
= 360V
Ω
45
, V
30
GE
GE
t
t
d(on)
d(on)
= 15V
55
= 15V
Junction Temperature
40
T
J
- - - -
Gate Resistance
- - - -
- Degrees Centigrade
R
65
G
50
- Ohms
75
60
85
70
95
I
I
C
C
= 24A
80
= 48A
105
I
I
C
C
= 48A
= 24A
90
115
100
125
80
70
60
50
40
30
20
10
0
30
28
26
24
22
20
18
100
90
80
70
60
50
40
30
20
10
0
12
Fig. 19. Inductive Turn-on Switching Times vs.
t
R
V
r i
G
CE
16
= 10
= 360V
Ω
, V
20
GE
t
d(on)
= 15V
24
Collector Current
- - - -
28
IXGH24N60C4D1
I
C
- Amperes
32
T
J
= 125ºC
36
40
IXYS REF: G_24N60C4D1(L2)3-15-10
T
J
44
= 25ºC
48
32
30
28
26
24
22
20
18
16
14
12