IXGH24N60C4D1 IXYS, IXGH24N60C4D1 Datasheet - Page 7
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IXGH24N60C4D1
Manufacturer Part Number
IXGH24N60C4D1
Description
High-Frequency Range (>40khz), C-IGBT w/Diode
Manufacturer
IXYS
Datasheet
1.IXGH24N60C4D1.pdf
(7 pages)
Specifications of IXGH24N60C4D1
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
56
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
24
Vce(sat), Max, Tj=25°c, Igbt, (v)
2.7
Tfi, Typ, Tj=25°c, Igbt, (ns)
68
Eoff, Typ, Tj=125°c, Igbt, (mj)
0.5
Rthjc, Max, Igbt, (°c/w)
0.65
If, Tj=110°c, Diode, (a)
18
Rthjc, Max, Diode, (ºc/w)
1.6
Package Style
TO-247
IXGH24N60C4D1
Fig. 21. Forward Current I
vs. V
Fig. 22. Reverse Recovery Change
Fig. 23. Peak Reverse Current
F
F
Q
vs. -di
/dt
I
vs. -di
/dt
r
F
RM
F
Fig. 24. Dynamic Parameters
Fig. 25. Recovery Time t
vs. -di
/dt
Fig. 26. Peak Forward Voltage
r
F
Q
I
vs. T
V
, t
vs. -di
/dt
r,
RM
VJ
FR
r
F
Fig. 27. Transient Thermal Resistance Junction to Case
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