IXGH50N60B4D1 IXYS, IXGH50N60B4D1 Datasheet - Page 2
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IXGH50N60B4D1
Manufacturer Part Number
IXGH50N60B4D1
Description
PT Trench IGBTs
Manufacturer
IXYS
Datasheet
1.IXGQ50N60B4D1.pdf
(7 pages)
Specifications of IXGH50N60B4D1
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
100
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
50
Vce(sat), Max, Tj=25°c, Igbt, (v)
1.8
Tfi, Typ, Tj=25°c, Igbt, (ns)
80
Eoff, Typ, Tj=125°c, Igbt, (mj)
1.9
Rthjc, Max, Igbt, (°c/w)
0.42
If, Tj=110°c, Diode, (a)
18
Rthjc, Max, Diode, (ºc/w)
1.6
Package Style
TO-247
Symbol Test Conditions
(T
g
C
C
C
Q
Q
Q
t
t
E
t
t
E
t
t
E
t
t
E
R
R
Reverse Diode (FRED)
Symbol Test Conditions
(T
V
I
t
R
Notes:
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
RM
d(on)
ri
d(off)
fi
d(on)
ri
d(off)
fi
rr
fs
F
ie
oes
res
on
of
on
off
thJC
thCS
thJC
g
ge
gc
J
J
s
f
= 25°C Unless Otherwise Specified)
= 25°C Unless Otherwise Specified)
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Switching times & energy losses may increase for higher V
I
V
I
F
F
I
F
R
= 15A, V
= 15A, V
= 100V
= 1A, V
V
I
Inductive Load, T
I
V
Note 2
Inductive Load, T
I
V
Note 2
I
C
C
C
C
CE
CE
CE
=
= 36A, V
= 36A, V
= 36A, V
= 25V, V
= 400V, R
= 400V, R
I
C110
GE
GE
GE
, V
= 0V, -di
= 0V, Note 1
= 0V, -di
GE
GE
GE
CE
GE
= 15V
= 15V
= 10V, Note 1
= 15V, V
G
G
= 0V, f = 1MHz
= 10
= 10
4,835,592
4,881,106
F
F
/dt = 100A/μs, V
J
J
/dt = 100A/μs
= 25°C
= 125°C
Ω
Ω
CE
= 0.5
4,931,844
5,017,508
5,034,796
•
V
,
CES
R
5,049,961
5,063,307
5,187,117
= 30V
T
T
T
J
J
J
20
= 150°C
= 100°C
= 100°C
Min.
5,237,481
5,381,025
5,486,715
Characteristic Values
Characteristic Values
Min.
6,162,665
6,259,123 B1
6,306,728 B1
1860
0.93
1.00
0.94
1.90
0.25
Typ.
105
110
330
280
220
30
60
13
43
37
68
80
31
45
CE
Typ.
1.6
100
(clamp), T
25
Max.
1.80
0.42 °C/W
6,404,065 B1
6,534,343
6,583,505
1.6 °C/W
Max.
2.7
2.6
J
°C/W
or R
mJ
mJ
mJ
mJ
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
S
V
V
A
G
.
6,683,344
6,710,405 B2 6,759,692
6,710,463
1 = Gate
3 = Emitter
TO-3P Outline
TO-247 Outline
Terminals: 1 - Gate
6,727,585
6,771,478 B2 7,071,537
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
∅P
Q
R
S
1
2
1
2
IXGH50N60B4D1
IXGQ50N60B4D1
20.80
15.75
19.81
Min.
1.65
2.87
5.20
3.55
5.89
4.32
6.15 BSC
4.7
2.2
2.2
1.0
Millimeter
3 - Emitter
1
.4
7,005,734 B2
7,063,975 B2
2
21.46
16.26
20.32
Max.
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
2,4
3
5.3
2.6
1.4
.8
e
= Collector
2 - Collector
0.205 0.225
0.232 0.252
∅ P
Min.
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
242 BSC
Inches
7,157,338B2
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216