IXGH50N60B4D1 IXYS, IXGH50N60B4D1 Datasheet - Page 3

• Manufacturer Part Number: IXGH50N60B4D1
• Description: PT Trench IGBTs
• Manufacturer: IXYS

Specifications of IXGH50N60B4D1

• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 100
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 50
• Vce(sat), Max, Tj=25°c, Igbt, (v): 1.8
• Tfi, Typ, Tj=25°c, Igbt, (ns): 80
• Eoff, Typ, Tj=125°c, Igbt, (mj): 1.9
• Rthjc, Max, Igbt, (°c/w): 0.42
• If, Tj=110°c, Diode, (a): 18
• Rthjc, Max, Diode, (ºc/w): 1.6
• Package Style: TO-247

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4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
72
64
56
48
40
32
24
16
72
64
56
48
40
32
24
16
8
0
8
0
0
0
6
0.2
0.2
7
Fig. 3. Output Characteristics @ T
Fig. 1. Output Characteristics @ T
0.4
0.4
Fig. 5. Collector-to-Emitter Voltage vs.
18A
8
0.6
0.6
36A
I
C
Gate-to-Emitter Voltage
0.8
0.8
= 72A
9
V
1
1
CE
V
10
V
CE
GE
- Volts
- Volts
1.2
1.2
- Volts
V
GE
V
GE
11
= 15V
1.4
1.4
13V
11V
10V
= 15V
13V
11V
10V
1.6
1.6
12
J
J
1.8
1.8
= 125ºC
= 25ºC
13
T
2
2
J
= 25ºC
9V
8V
7V
6V
9V
8V
7V
6V
5V
14
2.2
2.2
2.4
2.4
15
120
100
350
300
250
200
150
100
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
50
80
60
40
20
0
0
-50
4.0
0
V
GE
Fig. 2. Extended Output Characteristics @ T
V
GE
4.5
= 15V
-25
= 15V
5.0
5
Fig. 4. Dependence of V
14V
0
5.5
Fig. 6. Input Admittance
Junction Temperature
T
6.0
J
13V
25
- Degrees Centigrade
10
V
CE
V
6.5
GE
- Volts
50
- Volts
IXGH50N60B4D1
IXGQ50N60B4D1
7.0
12V
I
I
I
C
C
C
= 72A
= 36A
= 18A
15
T
75
7.5
J
CE(sat)
= - 40ºC
125ºC
11V
25ºC
8.0
100
on
20
8.5
10V
J
= 25ºC
125
9.0
9V
8V
7V
6V
9.5
150
25