IXGH12N100U1 IXYS, IXGH12N100U1 Datasheet

IXGH12N100U1

Manufacturer Part Number

IXGH12N100U1

Description

Low-Frequency Range (DC-15khz), Low Vcesat w/ Diode

Manufacturer

IXYS

Datasheet

1.IXGH12N100U1.pdf (5 pages)

Specifications of IXGH12N100U1

Vces, (v)

1000

Ic25, Tc=25°c, Igbt, (a)

Ic90, Tc=90°c, Igbt, (a)

Ic110, Tc=110°c, Igbt, (a)

Vce(sat), Max, Tj=25°c, Igbt, (v)

3.5

Tfi, Typ, Tj=25°c, Igbt, (ns)

800

Eoff, Typ, Tj=125°c, Igbt, (mj)

Rthjc, Max, Igbt, (°c/w)

1.25

If, Tj=110°c, Diode, (a)

Rthjc, Max, Diode, (ºc/w)

2.5

Package Style

TO-247

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IXGH12N100U1

Manufacturer:

IXYS

Quantity:

15 500

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Low V

High Speed IGBT with Diode

Combi Pack

Symbol

SSOA

(RBSOA)

Weight

Maximum lead temperature for soldering

1.6 mm (0.062 in.) from case for 10 s

Symbol

IXYS reserves the right to change limits, test conditions, and dimensions.

C25

C90

CES

GES

stg

CGR

CES

GES

GEM

GE(th)

CE(sat)

CES

= 25°C, unless otherwise specified)

CE(sat)

Test Conditions

Continuous

Transient

Clamped inductive load, L = 300 mH

Mounting torque with screw M3

Test Conditions

GE(th)

CES

= 3 mA, V

= 500 mA, V

= 0 V

= 0 V, V

= I

= 0.8, V

= 25°C to 150°C

= 25°C to 150°C; R

= 25°C

= 90°C

= 25°C, 1 ms

= 15 V, T

= 25°C

temperature coefficient

CE90

IGBT with Diode

, V

CES

= ±20 V

= 15

= 125°C, R

= 0 V

= V

= 1 MW

= 150 W

12N100U1

12N100AU1

= 25°C

= 125°C

Min.

1000

Maximum Ratings

2.5

Characteristic Values

-55 ... +150

0.072

-0.192

@ 0.8 V

IXGH 12N100U1

IXGH 12N100AU1

Typ.

1.13/10 Nm/lb.in.

1000

= 24

±20

±30

100

150

300

CES

±100

Max.

300

5.5

3.5

4.0

%/K

°C

TO-247AD

G = Gate

E = Emitter

Features

• International standard packages

• IGBT with antiparallel FRED in one

• HDMOS

• Low V

• MOS Gate turn-on

• Fast Recovery Expitaxial Diode (FRED)

Applications

• DC choppers

• AC motor speed control

• DC servo and robot drives

• Uninterruptible power supplies (UPS)

• Switch-mode and resonant-mode

Advantages

• Easy to mount with one screw

• Reduces assembly time and cost

• Space savings (two devices in one

JEDEC TO-247

package

- for minimum on-state conduction

- drive simplicity

- soft recovery with low I

power supplies

package)

losses

1000 V 24 A 3.5 V

1000 V 24 A 4.0 V

CE(sat)

CES

process

TAB = Collector

= Collector

C25

95596C (7/00)

C (TAB)

CE(sat)

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Related parts for IXGH12N100U1

IXGH12N100U1 Summary of contents

Page 1

... ± GES CE(sat) C CE90 GE IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved IXGH 12N100U1 IXGH 12N100AU1 Maximum Ratings 1000 = 1 MW 1000 GE ±20 ± 150 ...

Page 2

Page 3

Page 4

... Q - nanocoulombs g Figure 9. Gate Charge 1 D=0.5 D=0.2 D=0.1 0.1 D=0.05 D=0.02 D=0.01 Single pulse 0.01 0.001 0.00001 0.0001 © 2000 IXYS All rights reserved IXGH12N100U1 (OFF OFF Duty Cycle 0.001 Pulse Width - Seconds Figure 11. Transient Thermal Resistance IXGH12N100AU1 1000 ...

Page 5

... Fig. 12. Forward current versus voltage drop. Fig. 15. Dynamic parameters versus junction temperature. Fig. 18. Transient thermal impedance junction to case. © 2000 IXYS All rights reserved IXGH12N100U1 Fig. 13. Recovery charge versus -di /dt. F Fig. 16. Reverse recovery time . versus -di /dt F IXGH12N100AU1 Fig. 14. Peak reverse current versus -di /dt ...

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