IXGH12N100U1 IXYS, IXGH12N100U1 Datasheet - Page 5
IXGH12N100U1
Manufacturer Part Number
IXGH12N100U1
Description
Low-Frequency Range (DC-15khz), Low Vcesat w/ Diode
Manufacturer
IXYS
Datasheet
1.IXGH12N100U1.pdf
(5 pages)
Specifications of IXGH12N100U1
Vces, (v)
1000
Ic25, Tc=25°c, Igbt, (a)
24
Ic90, Tc=90°c, Igbt, (a)
12
Ic110, Tc=110°c, Igbt, (a)
-
Vce(sat), Max, Tj=25°c, Igbt, (v)
3.5
Tfi, Typ, Tj=25°c, Igbt, (ns)
800
Eoff, Typ, Tj=125°c, Igbt, (mj)
10
Rthjc, Max, Igbt, (°c/w)
1.25
If, Tj=110°c, Diode, (a)
12
Rthjc, Max, Diode, (ºc/w)
2.5
Package Style
TO-247
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXGH12N100U1
Manufacturer:
IXYS
Quantity:
15 500
© 2000 IXYS All rights reserved
Fig. 12. Forward current versus
Fig. 15. Dynamic parameters versus
Fig. 18. Transient thermal impedance junction to case.
junction temperature.
voltage drop.
Fig. 13. Recovery charge versus -di
Fig. 16. Reverse recovery time .
versus -di
F
IXGH12N100U1
/dt
F
/dt.
Fig. 14. Peak reverse current versus
Fig. 17. Forward voltage recovery and
-di
time versus -di
IXGH12N100AU1
F
/dt.
F
/dt.
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