IXGK82N120B3 IXYS, IXGK82N120B3 Datasheet - Page 4

• Manufacturer Part Number: IXGK82N120B3
• Description: Mid-Frequency Range (15khz-40khz)
• Manufacturer: IXYS

Specifications of IXGK82N120B3

• Vces, (v): 1200
• Ic25, Tc=25°c, Igbt, (a): 230
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 82
• Vce(sat), Max, Tj=25°c, Igbt, (v): 3.2
• Tfi, Typ, Tj=25°c, Igbt, (ns): 100
• Eoff, Typ, Tj=125°c, Igbt, (mj): 7.1
• Rthjc, Max, Igbt, (°c/w): 0.1
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): -
• Package Style: TO-264

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
1,000
100
100
1.000
0.100
0.010
0.001
90
80
70
60
50
40
30
20
10
0
0.00001
0
0
f
= 1 MHz
20
5
40
10
Fig. 7. Transconductance
60
Fig. 9. Capacitance
15
I
0.0001
V
C
80
CE
- Amperes
- Volts
20
C res
100
C oes
25
C ies
120
Fig. 11. Maximum Transient Thermal Impedance
Fig. 11. Maximum Transient Thermal Impedance
T
J
= - 40ºC
125ºC
30
25ºC
140
35
0.001
160
Pulse Width - Second
180
40
180
160
140
120
100
16
14
12
10
80
60
40
20
8
6
4
2
0
0
200
0
V
I
I
T
R
dV / dt < 10V / ns
C
G
300
CE
J
G
0.01
= 82A
= 10mA
= 125ºC
= 2Ω
= 600V
50
Fig. 10. Reverse-Bias Safe Operating Area
400
100
500
Fig. 8. Gate Charge
Q
600
G
150
- NanoCoulombs
V
CE
700
- Volts
0.1
200
800
IXGK82N120B3
IXGX82N120B3
900
250
1000
IXYS REF: G_82N120B3H1(8T)5-14-09
300
1100
1200
350
1