IXGK82N120B3 IXYS, IXGK82N120B3 Datasheet - Page 6
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IXGK82N120B3
Manufacturer Part Number
IXGK82N120B3
Description
Mid-Frequency Range (15khz-40khz)
Manufacturer
IXYS
Datasheet
1.IXGK82N120B3.pdf
(6 pages)
Specifications of IXGK82N120B3
Vces, (v)
1200
Ic25, Tc=25°c, Igbt, (a)
230
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
82
Vce(sat), Max, Tj=25°c, Igbt, (v)
3.2
Tfi, Typ, Tj=25°c, Igbt, (ns)
100
Eoff, Typ, Tj=125°c, Igbt, (mj)
7.1
Rthjc, Max, Igbt, (°c/w)
0.1
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
Package Style
TO-264
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
110
100
160
140
120
100
90
80
70
60
50
40
30
20
80
60
40
20
25
2
t
T
V
R
V
3
t
r i
J
CE
35
r i
G
CE
= 125ºC, V
Switching Times vs. Junction Temperature
= 600V
= 2Ω , V
= 600V
Switching Times vs. Gate Resistance
4
I
I
C
C
45
= 40A
= 80A
5
GE
GE
Fig. 18. Inductive Turn-on
Fig. 20. Inductive Turn-on
t
= 15V
d(on)
= 15V
t
55
d(on)
I
6
C
T
J
= 80A
- - - -
- Degrees Centigrade
- - - -
I
7
65
R
C
G
= 40A
- Ohms
8
75
9
85
10
11
95
12
105
13
115
14
125
15
40
38
36
34
32
30
28
26
24
22
90
80
70
60
50
40
30
20
140
120
100
80
60
40
20
0
20
R
V
t
25
r i
CE
G
= 2Ω , V
= 600V
Switching Times vs. Collector Current
30
GE
35
t
= 15V
T
Fig. 19. Inductive Turn-on
d(on)
J
= 125ºC, 25ºC
40
- - - -
45
I
C
50
- Amperes
55
IXGK82N120B3
IXGX82N120B3
60
65
70
IXYS REF: G_82N120B3H1(8T)5-14-09
75
80
36
34
32
30
28
26
24
22