IXGX82N120B3 IXYS, IXGX82N120B3 Datasheet

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IXGX82N120B3

Manufacturer Part Number
IXGX82N120B3
Description
Mid-Frequency Range (15khz-40khz)
Manufacturer
IXYS
Datasheet

Specifications of IXGX82N120B3

Vces, (v)
1200
Ic25, Tc=25°c, Igbt, (a)
230
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
82
Vce(sat), Max, Tj=25°c, Igbt, (v)
3.2
Tfi, Typ, Tj=25°c, Igbt, (ns)
100
Eoff, Typ, Tj=125°c, Igbt, (mj)
7.1
Rthjc, Max, Igbt, (°c/w)
0.1
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
Package Style
PLUS247
GenX3
IGBTs
High-Speed Low-Vsat PT IGBTs
for 3 - 20 kHz Switching
Symbol
V
V
V
V
I
I
I
I
I
E
SSOA
(RBSOA)
P
T
T
T
T
T
M
F
Weight
Symbol
(T
BV
V
I
I
V
© 2009 IXYS CORPORATION, All Rights Reserved
C25
C110
LRMS
CM
A
CES
GES
J
JM
stg
L
SOLD
C
CES
CGR
GES
GEM
AS
C
GE(th)
CE(sat)
d
J
CES
= 25°C, Unless Otherwise Specified)
TM
Continuous
Transient
T
T
T
T
T
V
Clamped Inductive Load
T
Maximum Lead Temperature for Soldering
1.6 mm (0.062 in.) from Case for 10
Mounting Torque ( IXGK )
Mounting Force ( IXGX )
TO-264
PLUS247
I
I
V
V
I
Test Conditions
T
T
Test Conditions
T
C
C
C
C
C
C
C
C
C
J
J
GE
CE
CE
C
1200V
= 25°C to 150°C, R
= 25°C to 150°C
= 25°C ( Chip Capability )
= 110°C
= 25°C ( Lead RMS Limit )
= 25°C, 1ms
= 25°C
= 15V, T
= 25°C
= 25°C
= 250μA, V
= 1mA, V
= V
= 0V, V
= I
C110
CES
, V
, V
VJ
GE
GE
CE
GE
= 125°C, R
= ± 20V
= 15V, Note 2
CE
= V
= 0V
= 0V
GE
GE
T
T
J
J
= 1MΩ
G
= 125°C, Note 1
= 125°C
= 2Ω
Advance Technical Information
IXGK82N120B3
IXGX82N120B3
20..120/4.5..14.6
1200
Characteristic Values
Min.
3.0
-55 ... +150
-55 ... +150
V
Maximum Ratings
I
CE
CM
1.13/10
< V
= 164
1200
1200
1250
300
±20
±30
230
120
750
150
260
500
Typ.
2.70
2.64
CES
82
10
41
6
±100 nA
Nm/lb.in.
Max.
3.20
5.0
50 μA
5 mA
N/lb.
mJ
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
A
A
V
V
V
V
A
g
g
V
I
V
TO-264 (IXGK)
PLUS247
G = Gate
C = Collector
Features
Advantages
Applications
C110
Optimized for Low Conduction and
Switching Losses
Square RBSOA
High Avalanche Capability
International Standard Packages
High Power Density
Low Gate Drive Requirement
Power Inverters
UPS
SMPS
PFC Circuits
Welding Machines
Lamp Ballasts
CES
CE(sat)
G
G
TM
C
C
≤ ≤ ≤ ≤ ≤ 3.20V
E
= 1200V
= 82A
E
(IXGX)
E
E
TAB = Collector
DS100155(05/09)
(TAB)
(TAB)
= Emitter

Related parts for IXGX82N120B3

IXGX82N120B3 Summary of contents

Page 1

... CES 0V ± 20V GES 15V, Note 2 CE(sat) C C110 GE © 2009 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXGK82N120B3 IXGX82N120B3 Maximum Ratings 1200 = 1MΩ 1200 GE ±20 ±30 230 82 120 500 41 750 = 2Ω 164 < ...

Page 2

... T CE 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXGK82N120B3 IXGX82N120B3 TO-264 (IXGK) Outline Max 180 ns 6 0.10 °C/W °C/W PLUS247 (IXGX) Outline ...

Page 3

... T = 25ºC J 160 140 120 I = 164A C 100 80 60 82A 40 20 41A IXGK82N120B3 IXGX82N120B3 Fig. 2. Extended Output Characteristics @ 25º 15V GE 13V 11V Volts CE Fig. 4. Dependence of V Junction Temperature V = 15V 164A 82A ...

Page 4

... C ies 140 120 100 C oes res Fig. 11. Maximum Transient Thermal Impedance Fig. 11. Maximum Transient Thermal Impedance 0.001 Pulse Width - Second IXGK82N120B3 IXGX82N120B3 Fig. 8. Gate Charge V = 600V 82A 10mA 100 150 ...

Page 5

... IXGK82N120B3 IXGX82N120B3 Fig. 13. Inductive Switching Energy Loss vs. Collector Current off on Ω 15V 600V ...

Page 6

... IXGK82N120B3 IXGX82N120B3 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current d(on 2Ω 15V 600V 125ºC, 25º Amperes ...

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