IXGX82N120B3 IXYS, IXGX82N120B3 Datasheet - Page 3

• Manufacturer Part Number: IXGX82N120B3
• Description: Mid-Frequency Range (15khz-40khz)
• Manufacturer: IXYS

Specifications of IXGX82N120B3

• Vces, (v): 1200
• Ic25, Tc=25°c, Igbt, (a): 230
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 82
• Vce(sat), Max, Tj=25°c, Igbt, (v): 3.2
• Tfi, Typ, Tj=25°c, Igbt, (ns): 100
• Eoff, Typ, Tj=125°c, Igbt, (mj): 7.1
• Rthjc, Max, Igbt, (°c/w): 0.1
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): -
• Package Style: PLUS247

© 2009 IXYS CORPORATION, All Rights Reserved
180
160
140
120
100
180
160
140
120
100
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
80
60
40
20
80
60
40
20
0
0
0.0
0.0
6
0.5
0.5
7
1.0
1.0
Fig. 5. Collector-to-Emitter Voltage
8
Fig. 3. Output Characteristics
Fig. 1. Output Characteristics
vs. Gate-to-Emitter Voltage
1.5
1.5
9
V
2.0
2.0
V
10
V
@ 125ºC
CE
@ 25ºC
CE
GE
- Volts
- Volts
- Volts
2.5
2.5
11
V
GE
V
GE
= 15V
I
3.0
3.0
12
C
13V
11V
= 15V
= 164A
13V
11V
82A
41A
3.5
3.5
13
T
9V
7V
5V
J
9V
7V
5V
= 25ºC
4.0
4.0
14
4.5
4.5
15
320
280
240
200
160
120
180
160
140
120
100
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
80
40
80
60
40
20
0
0
-50
3.5
0
V
V
GE
GE
4.0
2
= 15V
-25
= 15V
13V
11V
Fig. 2. Extended Output Characteristics
4.5
4
Fig. 4. Dependence of V
0
5.0
6
7V
5V
9V
Fig. 6. Input Admittance
T
Junction Temperature
J
T
= 125ºC
J
25
- 40ºC
- Degrees Centigrade
5.5
25ºC
8
V
V
@ 25ºC
GE
CE
6.0
10
50
- Volts
- Volts
IXGK82N120B3
IXGX82N120B3
I
I
I
6.5
12
C
C
C
75
= 164A
= 82A
= 41A
CE(sat)
7.0
14
100
on
7.5
16
125
8.0
18
150
8.5
20