IXGT2N250 IXYS, IXGT2N250 Datasheet - Page 3

• Manufacturer Part Number: IXGT2N250
• Description: VHV NPT IGBTs (2500V - 4000V)
• Manufacturer: IXYS

Specifications of IXGT2N250

• Vces, (v): 2500
• Ic25, Tc=25°c, Igbt, (a): 5.5
• Ic110, Tc=110°c, Igbt, (a): 2
• Vce(sat), Max, Tj=25°c, Igbt, (v): 3.1
• Tfi, Typ, Igbt, (ns): -
• Eoff, Typ, Tj=125°c, Igbt, (mj): -
• Rthjc, Max, Igbt, (k/w): 3.9
• Package Style: TO-268

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4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
0.0
0.0
6
0.5
0.5
7
1.0
Fig. 5. Collector-to-Emitter Voltage
8
1.0
Fig. 1. Output Characteristics
Fig. 3. Output Characteristics
vs. Gate-to-Emitter Voltage
1.5
9
1.5
2.0
V
V
V
CE
10
CE
GE
@ 125ºC
@ 25ºC
- Volts
- Volts
2.0
2.5
- Volts
11
I
V
C
GE
3.0
= 4A
V
2A
1A
2.5
GE
= 25V
15V
20V
= 25V
12
20V
15V
3.5
3.0
13
4.0
10V
5V
T
J
10V
5V
= 25ºC
3.5
14
4.5
5.0
4.0
15
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
28
24
20
16
12
8
7
6
5
4
3
2
1
0
8
4
0
-50
3
0
V
GE
2
4
-25
= 15V
Fig. 2. Extended Output Characteristics
4
5
Fig. 4. Dependence of V
0
6
Fig. 6. Input Admittance
Junction Temperature
6
T
J
25
- Degrees Centigrade
8
V
V
7
CE
@ 25ºC
GE
- Volts
10
50
- Volts
V
GE
I
8
I
I
C
= 25V
C
C
15V
12
= 4A
20V
10V
= 2A
= 1A
T
75
J
CE(sat)
= - 40ºC
9
125ºC
IXGH2N250
IXGT2N250
14
25ºC
100
on
10
16
IXYS REF: G_2N250(2P)6-17-09
125
11
18
150
12
20