IXGT2N250 IXYS, IXGT2N250 Datasheet - Page 4
IXGT2N250
Manufacturer Part Number
IXGT2N250
Description
VHV NPT IGBTs (2500V - 4000V)
Manufacturer
IXYS
Datasheet
1.IXGT2N250.pdf
(5 pages)
Specifications of IXGT2N250
Vces, (v)
2500
Ic25, Tc=25°c, Igbt, (a)
5.5
Ic110, Tc=110°c, Igbt, (a)
2
Vce(sat), Max, Tj=25°c, Igbt, (v)
3.1
Tfi, Typ, Igbt, (ns)
-
Eoff, Typ, Tj=125°c, Igbt, (mj)
-
Rthjc, Max, Igbt, (k/w)
3.9
Package Style
TO-268
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
10.00
1.00
0.10
0.01
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.00001
250
0
T
J
T
R
dV / dt < 10V / ns
= - 40ºC
J
G
= 150ºC
500
= 50Ω
125ºC
25ºC
1
Fig. 9. Reverse-Bias Safe Operating Area
750
2
Fig. 7. Transconductance
1000
3
I
C
V
0.0001
- Amperes
CE
1250
- Volts
4
1500
5
1750
Fig. 11. Maximum Transient Thermal Impedance
6
2000
0.001
2250
7
Pulse Width - Second
2500
8
1,000
100
10
16
14
12
10
1
8
6
4
2
0
0
0
f
V
I
I
= 1 MHz
1
C
G
CE
0.01
= 2A
= 1mA
5
= 1000V
2
10
3
Fig. 10. Capacitance
Fig. 8. Gate Charge
4
15
Q
G
- NanoCoulombs
V
CE
5
20
- Volts
0.1
6
25
7
C ies
C res
C oes
IXGH2N250
IXGT2N250
8
30
9
35
10
1
11
40