MMIX4G20N250 IXYS, MMIX4G20N250 Datasheet - Page 5

• Manufacturer Part Number: MMIX4G20N250
• Description: VHV NPT IGBTs (2500V - 4000V)
• Manufacturer: IXYS

Specifications of MMIX4G20N250

• Vces, (v): 2500
• Ic25, Tc=25°c, Igbt, (a): 23
• Ic110, Tc=110°c, Igbt, (a): 14
• Vce(sat), Max, Tj=25°c, Igbt, (v): 3.1
• Tfi, Typ, Igbt, (ns): -
• Eoff, Typ, Tj=125°c, Igbt, (mj): -
• Tf, Typ, Igbt, (ns): 930
• Rthjc, Max, Igbt, (k/w): 1.25

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10.00
220
200
180
160
140
120
100
1.00
0.10
0.01
18
16
14
12
10
80
60
40
20
2.00
8
6
4
2
0
0
200
0.0001
0
T
R
dv / dt < 10V / ns
400
J
G
10
= 125ºC
= 10Ω
600
Fig. 9. Reverse-Bias Safe Operating Area
20
800
Fig. 7. Transconductance
30
1000 1200 1400 1600 1800 2000 2200 2400 2600
I
40
C
V
T
CE
- Amperes
0.001
J
= - 40ºC
- Volts
125ºC
25ºC
50
60
Fig. 11. Maximum Transient Thermal Impedance
Fig. 11. Maximum Transient Thermal Impedance
70
80
0.01
90
Pulse Width - Seconds
100
aaaaaa
10,000
1,000
100
10
16
14
12
10
8
6
4
2
0
0
0
f
V
I
I
C
G
CE
= 1 MHz
5
0.1
= 20A
= 10mA
= 1000V
5
10
10
15
Fig. 10. Capacitance
Fig. 8. Gate Charge
20
15
Q
G
MMIX4G20N250
- NanoCoulombs
V
25
CE
- Volts
20
30
1
25
35
40
30
C ies
C oes
C res
45
35
50
10
40
55