MMIX4G20N250 IXYS, MMIX4G20N250 Datasheet - Page 6

• Manufacturer Part Number: MMIX4G20N250
• Description: VHV NPT IGBTs (2500V - 4000V)
• Manufacturer: IXYS

Specifications of MMIX4G20N250

• Vces, (v): 2500
• Ic25, Tc=25°c, Igbt, (a): 23
• Ic110, Tc=110°c, Igbt, (a): 14
• Vce(sat), Max, Tj=25°c, Igbt, (v): 3.1
• Tfi, Typ, Igbt, (ns): -
• Eoff, Typ, Tj=125°c, Igbt, (mj): -
• Tf, Typ, Igbt, (ns): 930
• Rthjc, Max, Igbt, (k/w): 1.25

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
2000
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1400
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800
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0
0
20
25
0
R
V
t
T
V
CE
G
f
J
CE
Fig. 14. Resistive Turn-on Switching Times
50
Fig. 16. Resistive Turn-off Switching Times
= 10Ω , V
35
= 125ºC, V
= 1250V
= 1250V
30
100
Fig. 12. Resistive Turn-on Rise Time
45
GE
GE
t
= 15V
d(on)
150
= 15V
vs. Collector Current
vs. Junction Temperature
55
vs. Gate Resistance
40
- - - -
T
J
200
- Degrees Centigrade
I
C
65
R
- Amperes
G
T
J
250
- Ohms
50
= 25ºC
I
C
75
= 40A
300
I
t
R
V
C
f
I
G
CE
= 80A
85
C
60
= 10Ω, V
= 1250V
= 40A
350
T
95
J
= 125ºC
400
GE
I
t
C
d(off
= 15V
70
= 80A
105
)
- - - -
450
115
500
80
400
350
300
250
200
150
100
50
0
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150
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130
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100
90
80
125
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1000
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1600
1400
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1000
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200
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100
800
600
400
200
50
800
600
400
200
0
0
20
25
0
R
V
t
T
V
CE
G
Fig. 17. Resistive Turn-off Switching Times
f
J
CE
Fig. 15. Resistive Turn-off Switching Times
= 10Ω , V
35
50
= 125ºC, V
= 1250V
= 1250V
30
100
45
Fig. 13. Resistive Turn-on Rise Time
GE
GE
t
= 15V
vs. Junction Temperature
d(off)
150
= 15V
55
vs. Gate Resistance
I
I
- - - -
C
C
40
T
vs. Collector Current
= 40A
= 80A
J
200
65
- Degrees Centigrade
R
MMIX4G20N250
MMIX4G20N250
G
I
- Ohms
250
C
75
- Amperes
50
I
C
300
= 40A
T
85
J
= 125ºC
I
t
R
V
C
f
CE
G
350
= 80A
= 10Ω, V
= 1250V
95
T
60
J
= 25ºC
400
105
t
GE
d(off)
= 15V
450
- - - -
115
IXYS REF: G_20N250(4P)12-18-09
70
500
125
2000
1800
1600
1400
1200
1000
800
600
400
200
0
160
150
140
130
120
110
100
90
80