MMIX1G75N250 IXYS, MMIX1G75N250 Datasheet

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MMIX1G75N250

Manufacturer Part Number
MMIX1G75N250
Description
VHV NPT IGBTs (2500V - 4000V)
Manufacturer
IXYS
Datasheet

Specifications of MMIX1G75N250

Vces, (v)
2500
Ic25, Tc=25°c, Igbt, (a)
110
Ic110, Tc=110°c, Igbt, (a)
65
Vce(sat), Max, Tj=25°c, Igbt, (v)
2.9
Tfi, Typ, Igbt, (ns)
-
Eoff, Typ, Tj=125°c, Igbt, (mj)
-
Tf, Typ, Igbt, (ns)
175455
Rthjc, Max, Igbt, (k/w)
0.29
High Voltage IGBT
For Capacitor Discharge
Applications
( Electrically Isolated Tab)
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
P
T
T
T
T
T
V
F
Weight
Symbol
(T
BV
V
I
I
V
© 2011 IXYS CORPORATION, All Rights Reserved
C25
C90
CM
CES
GES
J
JM
stg
L
SOLD
C
CES
CES
GES
GEM
C
ISOL
GE(th)
CE(sat)
J
CES
= 25°C, Unless Otherwise Specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
V
Clamped Inductive Load
T
Maximum Lead Temperature for Soldering
1.6 mm (0.062 in.) from Case for 10s
50/60Hz, 1 minute
Mounting Force
Test Conditions
I
I
V
V
I
I
C
C
C
C
J
J
C
C
C
C
GE
CE
CE
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 90°C
= 25°C, V
= 15V, T
= 25°C
= 1mA, V
= 4mA, V
= 0.8 • V
= 0V, V
= 75A, V
= 300A, V
VJ
GE
GE
CES
GE
GE
CE
= 125°C, R
= ±20V
GE
= 20V, 1ms
= 15V, Note 1
, V
= V
= 0V
= 25V
GE
GE
= 0V
Note 2, T
GE
= 1MΩ
G
= 1Ω
Advance Technical Information
J
= 125°C
MMIX1G75N250
50..200 / 11..45
V
2500
3.0
CE
Min.
Characteristic Values
< 0.8 • V
-55 ... +150
-55 ... +150
Maximum Ratings
I
CM
= 200
2500
2500
2500
± 30
± 20
Typ.
300
260
110
580
430
150
CES
65
2.5
4.1
8
±200
5.0
2.9
Max.
50
5 mA
N/lb.
V~
μA
nA
°C
°C
°C
°C
°C
W
V
V
V
V
V
A
A
A
A
V
V
V
g
V
I
V
G = Gate
C = Collector
Features
Applications
Advantages
C90
G
Silicon Chip on Direct-Copper Bond
(DCB) Substrate
Isolated Mounting Surface
2500V~ Electrical Isolation
High Peak Current Capability
Low Saturation Voltage
Molding Epoxies Meet UL 94 V-0
Flammability Classification
Capacitor Discharge
Pulser Circuits
High Power Density
Easy to Mount
CES
CE(sat)
E
Isolated Tab
E
G
≤ ≤ ≤ ≤ ≤
=
= 2500V
2.9V
65A
E
DS100365(07/11)
= Emitter
C
C

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MMIX1G75N250 Summary of contents

Page 1

... ±20V GES 75A 15V, Note 1 CE(sat 300A 25V C GE © 2011 IXYS CORPORATION, All Rights Reserved Advance Technical Information MMIX1G75N250 Maximum Ratings 2500 = 1MΩ 2500 GE ± 20 ± 30 110 65 580 = 1Ω 200 < 0.8 • CES 430 -55 ...

Page 2

... CES 175 55 225 270 455 0.05 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 MMIX1G75N250 Max 0.29 °C/W °C/W 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 6,583,505 6,710,463 6,771,478 B2 7,071,537 ...

Page 3

... IXYS CORPORATION, All Rights Reserved MMIX1G75N250 PIN Gate 5-12 = Emitter 13-24 = Collector ...

Page 4

... CE(sat 300A 150A 75A C 75 100 125 150 120 100 6.5 7.0 7.5 8.0 8.5 9.0 MMIX1G75N250 Fig. 2. Output Characteristics @ 0.5 1 1.5 2 2 Volts CE Fig. 4. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 300A C 4 150A 3 2 75A ...

Page 5

... IXYS CORPORATION, All Rights Reserved 100,000 10,000 1,000 100 10 250 300 350 400 450 1.000 0.100 0.010 0.001 1500 1750 2000 2250 2500 0.00001 MMIX1G75N250 Fig. 8. Capacitance f = 1MHz Volts CE Fig. 10. Maximum Transient Thermal Impedance 0.0001 0.001 0.01 Pulse Width - Seconds C ies C oes C res ...

Page 6

... R = 1Ω 15V G GE 400 V = 1250V CE 360 320 280 240 200 160 120 80 225 250 275 300 MMIX1G75N250 Fig. 12. Resistive Turn-on Rise Time vs. Collector Current R = 1Ω 15V 1250V 100 125 150 175 200 I - Amperes C Fig. 14. Resistive Turn-off Switching Times vs ...

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