MMIX1G75N250 IXYS, MMIX1G75N250 Datasheet - Page 6

• Manufacturer Part Number: MMIX1G75N250
• Description: VHV NPT IGBTs (2500V - 4000V)
• Manufacturer: IXYS

Specifications of MMIX1G75N250

• Vces, (v): 2500
• Ic25, Tc=25°c, Igbt, (a): 110
• Ic110, Tc=110°c, Igbt, (a): 65
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.9
• Tfi, Typ, Igbt, (ns): -
• Eoff, Typ, Tj=125°c, Igbt, (mj): -
• Tf, Typ, Igbt, (ns): 175455
• Rthjc, Max, Igbt, (k/w): 0.29

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
2000
1800
1600
1400
1200
1000
800
600
400
200
700
600
500
400
300
200
100
900
800
700
600
500
400
300
200
100
0
0
75
25
1
R
V
t
T
V
100
r
J
CE
G
CE
35
Fig. 13. Resistive Turn-on Switching Times
Fig. 15. Resistive Turn-off Switching Times
= 125ºC, V
= 1Ω , V
2
= 1250V
= 1250V
125
45
Fig. 11. Resistive Turn-on Rise Time
I
3
GE
C
GE
= 300A
= 15V
t
d(on)
= 15V
T
vs. Junction Temperature
55
J
vs. Collector Current
150
vs. Gate Resistance
= 125ºC, 25ºC
4
- - - -
T
J
- Degrees Centigrade
65
I
R
C
175
5
G
I
- Amperes
C
- Ohms
I
= 300A
C
75
= 150A
I
200
6
C
= 150A
t
R
V
f
G
CE
85
= 1Ω, V
= 1250V
225
7
95
GE
8
t
250
= 15V
d(off)
105
- - - -
9
275
115
10
300
80
75
70
65
60
55
50
45
40
125
480
440
400
360
320
280
240
200
160
120
80
600
500
400
300
200
100
800
700
600
500
400
300
200
100
380
360
340
320
300
280
260
240
220
200
0
0
75
25
1
I
I
R
V
C
C
t
T
V
Fig. 14. Resistive Turn-off Switching Times
Fig. 16. Resistive Turn-off Switching Times
G
CE
35
f
J
CE
= 150A
= 300A
100
= 1Ω , V
= 125ºC, V
2
= 1250V
= 1250V
45
Fig. 12. Resistive Turn-on Rise Time
125
3
GE
vs. Junction Temperature
GE
= 15V
t
T
d(off)
55
J
= 15V
vs. Gate Resistance
- Degrees Centigrade
4
150
vs. Collector Current
- - - -
I
65
C
I
C
= 150A, 300A
R
MMIX1G75N250
5
G
- Amperes
175
- Ohms
75
6
85
t
R
V
200
f
CE
G
T
= 1Ω, V
J
= 1250V
7
= 125ºC
95
T
J
225
= 25ºC
GE
8
105
t
= 15V
d(off)
250
- - - -
115
IXYS REF: IXG_75N250(9P)87-10-10
9
275
125
10
450
400
350
300
250
200
150
100
50
750
675
600
525
450
375
300
225
150
75
300