IXBF42N300 IXYS, IXBF42N300 Datasheet - Page 2

• Manufacturer Part Number: IXBF42N300
• Description: VHV (2500V-3000V)
• Manufacturer: IXYS

Specifications of IXBF42N300

• Vces, (v): 3000
• Ic25, Tc=25°c, (a): 60
• Ic90, Tc=90°c, (a): -
• Ic110, Tc=110°c, (a): 24
• Vce(sat), Typ, Tj=25°c, (v): 3.0
• Tf Typ, Tj=25°c, (ns): 610
• Tfi Typ, Tj=25°c, (ns): -
• Gate Drive, (v): -
• Rthjc, Max, (k/w): 0.52
• Package Style: ISOPLUS I4-Pak

Symbol Test Conditions
(T
g
C
C
C
R
Q
Q
Q
t
t
t
t
t
t
t
t
R
R
Reverse Diode
Symbol Test Conditions
(T
V
t
I
Notes:
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
RM
d(on)
r
d(off)
f
d(on)
r
d(off)
f
rr
fS
F
ies
oes
res
Gi
thJC
thCS
g
ge
gc
J
J
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
= 25°C Unless Otherwise Specified)
= 25°C Unless Otherwise Specified)
1.
2. Device must be heatsunk for high-temperature leakage current
measurements to avoid thermal runaway.
Pulse test, t < 300μs, duty cycle, d < 2%.
Resistive Switching Times, T
I
V
Resistive Switching Times, T
I
V
I
I
V
I
V
Gate Input Resistance
I
C
C
F
C
C
F
CE
CE
R
CE
= 21A, V
= 42, V
= 42, V
= 42A, V
= 42A, V
= 42A, V
= 100V, V
PRELIMINARY TECHNICAL INFORMATION
= 1500V, R
= 1500V, R
= 25V, V
GE
GE
GE
GE
GE
CE
= 15V
= 15V
GE
GE
= 0V, -di
= 15V, V
= 0V, Note 1
= 10V, Note 1
= 0V, f = 1MHz
G
G
= 0V
4,835,592
4,881,106
= 20
= 20
Ω
Ω
F
CE
/dt = 100A/μs
= 1000V
4,931,844
5,017,508
5,034,796
J
J
= 25°C
= 125°C
5,049,961
5,063,307
5,187,117
Min.
Characteristic Values
28
5,237,481
5,381,025
5,486,715
Min.
Characteristic Values
Typ.
4780
0.15
200
330
445
460
490
6,162,665
6,259,123 B1
6,306,728 B1
170
610
580
3.0
28
45
56
75
72
72
1.7
Typ.
43
Max.
0.52 °C/W
6,404,065 B1
6,534,343
6,583,505
2.5
Max
°C/W
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
μs
ns
ns
ns
Ω
V
A
S
6,683,344
6,710,405 B2 6,759,692
6,710,463
ISOPLUS i4-Pak
6,727,585
6,771,478 B2 7,071,537
IXBF42N300
7,005,734 B2
7,063,975 B2
Pin 1 = Gate
Pin2 = Emitter
Pin 3 = Collector
Tab 4 = Isolated
TM
(HV) Outline
7,157,338B2