MIXA150W1200TEH IXYS, MIXA150W1200TEH Datasheet

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MIXA150W1200TEH

Manufacturer Part Number
MIXA150W1200TEH
Description
1200V XPT Modules
Manufacturer
IXYS
Datasheet

Specifications of MIXA150W1200TEH

Vces, Igbt, (v)
1200
Ic80, Igbt, (a)
150
Vce(sat), Typ, Tj 25°c (v)
1.8
Eon, Typ, 125°c (mj)
14
Eoff, Typ, 125°c (mj)
16
Rthjc, Typ, Igbt (k/w)
0.18
Ic80, Fwd, (a)
130
Rthjc, Fwd, (k/w)
0.28
Six-Pack
XPT IGBT
Part name
MIXA150W1200TEH
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
Features:
• Easy paralleling due to the positive
• Rugged XPT design
• Thin wafer technology combined with
• SONIC™ diode
temperature coefficient of the on-state
voltage
(Xtreme light Punch Through) results in:
the XPT design results in a competitive
low V
- fast and soft reverse recovery
- low operating forward voltage
- square RBSOA @ 3x I
- short circuit rated for 10 µsec.
- very low gate charge
- low EMI
CE(sat)
20
19
30, 31, 32
33, 34, 35
NTC
(Marking on product)
1
2
3
4
C
T1
T2
D1
D2
27
28
29
5
7
8
6
T3
T4
Application:
• AC motor drives
• Solar inverter
• Medical equipment
• Uninterruptible power supply
• Air-conditioning systems
• Welding equipment
• Switched-mode and
resonant-mode power supplies
D3
D4
24
25
26
10
11
12
9
T5
T6
D5
D6
21
22
23
16, 17, 18
13, 14, 15
MIXA150W1200TEH
Package:
• "E3-Pack" standard outline
• Insulated copper base plate
• Soldering pins for PCB mounting
• Temperature sense included
• Optimizes pin layout
Pin configuration see outlines.
V
I
V
C25
CES
CE(sat)
= 1200 V
= 1.8 V
= 220 A
20110510b
E72873
1 - 6

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MIXA150W1200TEH Summary of contents

Page 1

... Application: • AC motor drives • Solar inverter • Medical equipment • Uninterruptible power supply • Air-conditioning systems • Welding equipment • Switched-mode and resonant-mode power supplies MIXA150W1200TEH V = 1200 V CES I C25 V CE(sat) 16, 17, 18 Pin configuration see outlines. 13, 14, 15 Package: • "E3-Pack" standard outline • ...

Page 2

... I = 150 600 /dt = -2500 A/µ 150 (per diode MIXA150W1200TEH Ratings min. typ. max. Unit = 25°C 1200 ±20 ±30 = 25°C 220 = 80°C 150 = 25°C 695 = 25°C 1.8 2.1 = 125°C 2.1 = 25°C 5.4 6.0 6.5 = 25°C ...

Page 3

... IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved Conditions T C Conditions I < 1 mA; 50/60 Hz ISOL with heatsink compound Conditions MIXA150W1200TEH Ratings min. typ. max. Unit = 25°C 4.75 5.0 5.25 3375 Ratings min. typ. max. Unit -40 ...

Page 4

... Marking on Product Delivering Mode Base Qty Ordering Code MIXA150W1200TEH Box MIXA150W1200TEH 2D Data Matrix FOSS-ID 6 digits XXX XX-XXXXX YYCWx Logo Part name Prod.Index Date Code Part number M = Module I = IGBT X = XPT A = standard 150 = Current Rating [ Six-Pack 1200 = Reverse Voltage [V] ...

Page 5

... I [A] C Fig. 5 Typ. switching energy vs. collector current IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved = 125° 250 300 MIXA150W1200TEH 300 250 19 V 200 T = 125° ...

Page 6

... IXYS All rights reserved E rec [mJ] 2.0 2.5 3.0 NTC 100000 Diode 10000 IGBT R 1000 [Ω] IGBT FRD MIXA150W1200TEH Inverter Transistor & Diode 125° 600 Ω Ω 6 1600 1800 2000 2200 di /dt [A/µs] F Fig. 8 Typ. recovery energy E rec 100 ...

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