MIXA150W1200TEH IXYS, MIXA150W1200TEH Datasheet - Page 6
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MIXA150W1200TEH
Manufacturer Part Number
MIXA150W1200TEH
Description
1200V XPT Modules
Manufacturer
IXYS
Datasheet
1.MIXA150W1200TEH.pdf
(6 pages)
Specifications of MIXA150W1200TEH
Vces, Igbt, (v)
1200
Ic80, Igbt, (a)
150
Vce(sat), Typ, Tj 25°c (v)
1.8
Eon, Typ, 125°c (mj)
14
Eoff, Typ, 125°c (mj)
16
Rthjc, Typ, Igbt (k/w)
0.18
Ic80, Fwd, (a)
130
Rthjc, Fwd, (k/w)
0.28
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
[A]
[K/W]
Inverter D1 - D6
I
Z
C
thJC
0.01
300
250
200
150
100
0.1
50
0.001
0
1
0.0
Fig.7 Typical forward characteristics
Fig. 9 Typ. transient thermal impedance
0.5
T
0.01
VJ
= 125°C
1.0
V
T
CE
t [s]
1.5
0.1
VJ
0.027 0.002 0.054 0.002
0.028 0.03 0.05 0.03
0.06 0.03 0.096 0.03
0.065 0.08 0.08 0.08
= 25°C
[V]
R
i
IGBT
2.0
t
i
1
R
2.5
i
Diode
FRD
IGBT
t
i
3.0
10
[Ω]
R
[mJ]
E
100000
NTC
rec
10000
1000
100
11
10
10
1600
9
8
7
6
0
Fig. 10 Typ. NTC resistance vs. temperature
Fig. 8 Typ. recovery energy E
Inverter Transistor & Diode
27 Ω
T
V
VJ
R
25
1800
= 125°C
= 600 V
MIXA150W1200TEH
50
2000
di
15 Ω
F
T
/dt [A/µs]
C
75
[°C]
2200
100
rec
versus di
2400
125
4.7 Ω
F
20110510b
/dt
2600
150
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