MIEB101H1200EH IXYS, MIEB101H1200EH Datasheet - Page 3
MIEB101H1200EH
Manufacturer Part Number
MIEB101H1200EH
Description
Full Bridge IGBT Modules in E1, E2 and E3-Pack
Manufacturer
IXYS
Datasheet
1.MIEB101H1200EH.pdf
(8 pages)
Specifications of MIEB101H1200EH
Vces, (v)
1200
Ic25, Tc = 25°c, Igbt, (a)
183
Ic80, Tc = 80°c, Igbt, (a)
128
Vce(sat), Typ, Tj = 25°c, Igbt, (v)
1.8
Eoff, Typ, Tj = 125°c, Igbt, (mj)
9.7
Rthjc, Max, Igbt, (k/w)
0.2
If25, Tc = 25°c, Diode, (a)
135
If80, Tc = 80°c, Diode, (a)
90
Rthjc, Max, Diode, (k/w)
0.4
Package Style
E3-Pack
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
Symbol
T
T
T
V
CTI
M
R
d
d
R
Weight
V
Curves are measured on modul level except Fig. 14 to Fig. 17
Module
VJ
VJM
stg
S
A
ISOL
pin to chip
thCH
d
CE
= V
CE(sat)
Definitions
operating temperature
max. virtual junction temperature
storage temperature
isolation voltage
comparative tracking index
mounting torque (M5)
see
creep distance on surface
strike distance through air
thermal resistance case to heatsink
+ 2x R
pin to chip
· I
C
Conditions
I
with heatsink compound
ISOL
< 1 mA; 50/60 Hz
t = 1 min
t = 1 s
T
C
= 25°C unless otherwise stated
MIEB 101H1200EH
min.
12.7
-40
-40
9.6
3
Ratings
typ.
300
1.8
0.1
max.
3000
3600
125
150
125
200
6
20110615a
3 - 8
Unit
K/W
mm
mm
mW
Nm
V~
V~
°C
°C
°C
g