MIEB101H1200EH IXYS, MIEB101H1200EH Datasheet - Page 8

• Manufacturer Part Number: MIEB101H1200EH
• Description: Full Bridge IGBT Modules in E1, E2 and E3-Pack
• Manufacturer: IXYS

Specifications of MIEB101H1200EH

• Vces, (v): 1200
• Ic25, Tc = 25°c, Igbt, (a): 183
• Ic80, Tc = 80°c, Igbt, (a): 128
• Vce(sat), Typ, Tj = 25°c, Igbt, (v): 1.8
• Eoff, Typ, Tj = 125°c, Igbt, (mj): 9.7
• Rthjc, Max, Igbt, (k/w): 0.2
• If25, Tc = 25°c, Diode, (a): 135
• If80, Tc = 80°c, Diode, (a): 90
• Rthjc, Max, Diode, (k/w): 0.4
• Package Style: E3-Pack

IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
[ns]
[µC]
Q
t
Diode D1 - D4
rr
rr
700
600
500
400
300
200
100
24
20
16
12
1000
1000
8
4
0
Fig. 14 Typ. reverse recov.charge Q
Fig. 16 Typ. recovery time t
1200
1200
T
V
VJ
R
= 125°C
= 600 V
1400
1400
di
di
F
F
/dt [A/µs]
1600
1600
/dt [A/µs]
1800
1800
rr
T
V
versus di/dt
VJ
R
= 125°C
= 600 V
rr
2000
2000
vs. di/dt
200 A
100 A
50 A
100 A
200 A
50 A
2200
2200
[A]
I
[mJ]
E
rr
rec
160
140
120
100
80
60
40
1000
1000
8
6
4
2
0
Fig. 15 Typ. peak reverse current I
Fig. 17 Typ. recovery energy E
T
V
T
V
VJ
R
VJ
R
= 125°C
1200
1200
= 600 V
= 125°C
= 600 V
MIEB 101H1200EH
1400
1400
di
di
F
F
/dt [A/µs]
/dt [A/µs]
1600
1600
1800
1800
rec
versus di/dt
RM
2000
2000
vs. di/dt
100 A
50 A
200 A
100 A
200 A
50 A
20110615a
2200
2200
8 - 8