DHG10I1800PA IXYS, DHG10I1800PA Datasheet

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DHG10I1800PA

Manufacturer Part Number
DHG10I1800PA
Description
Manufacturer
IXYS
Datasheet

Specifications of DHG10I1800PA

Vrrm, (v)
1800
Ifavm, D = 0.5, Total, (a)
10
Ifavm, D = 0.5, Per Diode, (a)
10
@ Tc, (°c)
85
Ifsm, 10 Ms, Tvj=45°c, (a)
65
Vf, Max, Tvj =125°c, (v)
2.30
@ If, (a)
10
Trr, Typ, Tvj =25°c, (ns)
150
Irm , Typ, Tvj =25°c, (a)
8.0
@ -di/dt, (a/µs)
200
Tvjm, (°c)
150
Rthjc, Max, (k/w)
2.15
Package Style
TO-220AC
Sonic Fast Recovery Diode
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Single Diode
Part number
DHG 10 I 1800 PA
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
Symbol
V
V
V
r
T
P
I
I
t
C
IXYS reserves the right to change limits, conditions and dimensions.
©
I
I
R
Features / Advantages:
R
FAV
FSM
RM
F
rr
RRM
F0
VJ
tot
operation
- Power dissipation within the diode
- Turn-on loss in the commutating switch
F
J
thJC
2011 IXYS all rights reserved
Definition
max. repetitive reverse voltage
reverse current
forward voltage
average forward current
threshold voltage
slope resistance
thermal resistance junction to case
virtual junction temperature
total power dissipation
max. forward surge current
max. reverse recovery current
reverse recovery time
junction capacitance
for power loss calculation only
● Antiparallel diode for high frequency
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
● Uninterruptible power supplies (UPS)
rectangular
I
-di
Applications:
Conditions
V
V
I
I
I
I
t = 10 ms
V =
F
F
F
F
F
R
R
R
switching devices
supplies (SMPS)
=
F
=
=
=
=
=
=
/dt
1800
1800
10
Data according to IEC 60747and per diode unless otherwise specified
900
=
10
20
10
20
A;
3
V
V
A
A
A
A
250
V;
(50 Hz), sine
V
R
f = 1 MHz
A/µs
=
d =
900
0.5
V
1
T
T
T
T
T
T
T
T
T
T
T = 125°C
T
T = 125°C
T
VJ
VJ
VJ
VJ
VJ
C
VJ
C
VJ
VJ
VJ
VJ
VJ
VJ
= 25
=
=
=
=
= 100°C
= 150°C
=
= 45°C
=
=
=
125
125
DHG 10 I 1800 PA
25
25
25
25
25
25
● Housing:
●rIndustry standard outline
●rEpoxy meets UL 94V-0
●rRoHS compliant
V
I
t
Package:
°C
°C
°C
°C
°C
°C
°C
°C
°C
FAV
rr
RRM
min.
=
=
=
-55
R a t i n g s
TO-220
1800
typ.
300
550
300 ns
13
15
Backside: cathode
10
3
max.
preliminary
1800
2.23
2.90
2.33
3.25
1.30
1.50
V
A
150
0.1
50
10
95
85
60
20110622a
Unit
K/W
mΩ
mA
µA
pF
°C
ns
ns
W
V
V
V
V
V
A
V
A
A
A

Related parts for DHG10I1800PA

DHG10I1800PA Summary of contents

Page 1

... I max. reverse recovery current RM t reverse recovery time rr C junction capacitance J IXYS reserves the right to change limits, conditions and dimensions. 2011 IXYS all rights reserved © Applications: ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● ...

Page 2

... Standard IXYS reserves the right to change limits, conditions and dimensions. 2011 IXYS all rights reserved © Conditions per terminal Marking on Product Delivery Mode DHG10I1800PA Tube Data according to IEC 60747and per diode unless otherwise specified DHG 10 I 1800 PA preliminary Ratings min. typ. ...

Page 3

... Outlines TO-220 E Ø IXYS reserves the right to change limits, conditions and dimensions. 2011 IXYS all rights reserved © Dim. Millimeter Min 4. 1.14 A2 2.29 b 0.64 b2 1.15 C 0.35 D 14.73 E 9.91 e 5.08 H1 5.85 L 12.70 L1 2.79 ØP 3. 2.54 A2 Data according to IEC 60747and per diode unless otherwise specified ...

Page 4

... Fig. 3 Typ. peak reverse current I 4 125° 900 V 3.5 R 3.0 E rec 2.5 [mJ] 2.0 1.5 1.0 200 300 400 500 di /dt [A/µs] F Fig. 5 Typ. recovery energy E IXYS reserves the right to change limits, conditions and dimensions. 2011 IXYS all rights reserved © 4.0 3.6 3.2 Q 2.8 rr 2.4 [µC] 2.0 1.6 1.2 2.0 2.5 3.0 F 700 20 A 600 500 t ...

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