DHG10I1800PA IXYS, DHG10I1800PA Datasheet - Page 4

• Manufacturer Part Number: DHG10I1800PA
• Manufacturer: IXYS

Specifications of DHG10I1800PA

• Vrrm, (v): 1800
• Ifavm, D = 0.5, Total, (a): 10
• Ifavm, D = 0.5, Per Diode, (a): 10
• @ Tc, (°c): 85
• Ifsm, 10 Ms, Tvj=45°c, (a): 65
• Vf, Max, Tvj =125°c, (v): 2.30
• @ If, (a): 10
• Trr, Typ, Tvj =25°c, (ns): 150
• Irm , Typ, Tvj =25°c, (a): 8.0
• @ -di/dt, (a/µs): 200
• Tvjm, (°c): 150
• Rthjc, Max, (k/w): 2.15
• Package Style: TO-220AC

IXYS reserves the right to change limits, conditions and dimensions.
©
I
[A]
[A]
[mJ]
E
RM
I
2011 IXYS all rights reserved
F
rec
4.0
3.5
3.0
2.5
2.0
1.5
1.0
20
15
10
28
24
20
16
12
5
0
200
200
0.0
Fig. 5 Typ. recovery energy E
Fig. 3 Typ. peak reverse current I
Fig. 1 Typ. Forward current versus V
T
V
T
V
VJ
VJ
R
R
0.5
= 125°C
= 125°C
= 900 V
= 900 V
300
300
1.0
di
400
400
di
F
F
T
T
/dt [A/µs]
V
/dt [A/µs]
VJ
VJ
1.5
F
= 125°C
= 25°C
[V]
500
500
2.0
rec
600
600
versus di/dt
2.5
RM
vs. di/dt
20 A
F
20 A
10 A
10 A
5 A
5 A
700
700
3.0
Data according to IEC 60747and per diode unless otherwise specified
[ns]
[µC]
t
Q
rr
[K/W]
Z
rr
thJC
700
600
500
400
300
200
4.0
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.1
10
0.001
1
200
200
Fig. 2 Typ. reverse recov.charge Q
Fig. 4 Typ. recovery time t
Fig. 6 Typ. transient thermal impedance
300
300
0.01
DHG 10 I 1800 PA
400
400
di
di
T
V
F
F
VJ
R
/dt [A/µs]
/dt [A/µs]
t
= 125°C
P
= 900 V
0.1
[s]
500
500
T
V
rr
VJ
R
versus di/dt
= 125°C
= 900 V
1
0.385
0.355
0.315
0.445
600
600
R
i
preliminary
rr
0.0005
0.004
0.02
0.15
vs. di/dt
20 A
10 A
5 A
20 A
10 A
20110622a
5 A
i
700
700
10