3SK131 NEC, 3SK131 Datasheet

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3SK131

Manufacturer Part Number
3SK131
Description
Manufacturer
NEC
Datasheet

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Document No. P12449EJ2V0DS00 (2nd edition)
Date Published March 1997 N
Printed in Japan
(Previous No. TC-1508)
FEATURES
• Suitable for use as RF amplifier in VHF TV tuner.
• Low C
• High G
• Low NF : 1.3 dB TYP.
ABSOLUTE MAXIMUM RATINGS (T
ELECTRICAL CHARACTERISTICS (T
I
N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR
DSS
Drain to Source Breakdown Voltage
Drain Current
Gate1 to Source Cutoff Voltage
Gate2 to Source Cutoff Voltage
Gate1 Reverse Current
Gate2 Reverse Current
Forward Transfer Admittance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Power Gain
Noise Figure
Drain to Source Voltage
Gate1 to Source Voltage
Gate2 to Source Voltage
Drain Current
Total Power Dissipation
Channel Temperature
Storage Temperature
classification
CHARACTERISTIC
rss
ps
: 0.05 pF TYP.
: 23 dB TYP.
V11 7-13 mA V12 11-19 mA V13 17-25 mA
RF AMP. FOR VHF TV TUNER
SYMBOL
V
V
V
I
P
T
T
V
V
D
BV
ch
stg
G1S(OFF)
G2S(OFF)
DSX
G1S
G2S
T

I
I
C
I
C
C
G1SS
G2SS
C
NF
DSS
y
oss
fs
iss
rss
DSX
ps

4PIN MINI MOLD
DATA SHEET
DATA SHEET
A
A
= 25
= 25

MIN.
4.0
2.2
20
22
21
55 to +125
7
MOS FIELD EFFECT TRANSISTOR
 
200
125
 
20


25
C)
C)
8
8
TYP.
0.05
5.0
2.9
1.2
10
28
24
mW
mA


V
V
V
C
C
MAX.


0.08


6.5
3.7
2.5
25
2.0
1.5
20
20
UNIT
mA
mS
nA
nA
pF
pF
pF
dB
dB
V
V
V
V
V
V
V
V
V
V
f = 1 kHz
V
f = 1 MHz
V
f = 200 MHz
PACKAGE DIMENSIONS
G1S
DS
DS
DS
DS
DS
DS
DS
DS
= 6 V, V
= 8 V, V
= 8 V V
= 0, V
= 0, V
= 6 V, V
= 6 V, V
= 10 V, V
= V
G2S
(Unit: mm)
TEST CONDITIONS
PIN CONNECTIONS
1.
2.
3.
4.
G1S
G2S
G1S
5
5
=
G2S
G2S
G2S
G2S
Source
Drain
Gate 2
Gate 1
3SK131
=
=
G2S

2 V, I
= 0, I
2.8
1.5


= 3 V, V
= 0, I
= 3 V, I
= 3 V, I
8 V, V
8 V, V
= 5 V, I
+0.2
+0.2
0.3
0.1
D
D
D
= 5
= 10
= 5
5
5
G2S
G1S
D
D
©
G1S
D
= 10 mA
= 10 mA

= 10 mA

= 0
= 0
A

= 0
A
A
1983

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3SK131 Summary of contents

Page 1

... V 2.0 G1S(OFF 1.5 G2S(OFF G1SS  I 20 G2SS   4.0 5.0 6.5 iss C 2.2 2.9 3.7 oss C 0.05 0.08 rss 1.2 2.5 3SK131 PACKAGE DIMENSIONS (Unit: mm) +0.2 2.8 0.3 +0.2 1.5 0 PIN CONNECTIONS 1. Source 2. Drain 3. Gate 2 4. Gate 1 UNIT TEST CONDITIONS   G1S G2S G2S ...

Page 2

... FORWARD TRANSFER ADMITTANCE vs. GATE1 TO SOURCE VOLTAGE 1.0 V -Gate 1 to Source Voltage-V +1.0 G1S INPUT CAPACITANCE vs. GATE2 TO SOURCE VOLTAGE 8.0 6.0 4.0 2 -Gate 2 to Source Voltage-V G2S 20 3SK131 G1S 0.1 0.2 0.3 0.4 0.5 0 G2S 1 6 ...

Page 3

... Transfer Conductance- G2S 0.1 0.2 POWER GAIN vs. DRAIN CURRENT 1 -Drain Current=mA D 3SK131 ) is 300 MHz 0.1 0.2 300 MHz 200 MHz 100 MHz f = 200 MHz G2S G2S 6 8 ...

Page 4

... V -Gate 2 to Source Voltage-V G2S TEST CONDITION 7 pF OUTPUT L 2 1000 pF 50 1000 1000 3SK131 G2S 200 MHz L : 0.6 mm U.E. ...

Page 5

... [MEMO] 3SK131 5 ...

Page 6

... [MEMO] 6 3SK131 ...

Page 7

... [MEMO] 3SK131 7 ...

Page 8

... The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. 3SK131 M4 96. 5 ...

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