RF2310 RF Micro Devices, RF2310 Datasheet

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RF2310

Manufacturer Part Number
RF2310
Description
Manufacturer
RF Micro Devices
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
RF2310
Manufacturer:
RFMD
Quantity:
20 000
Product Description
The RF2310 is a general purpose, low-cost, high linearity
RF amplifier IC. The device is manufactured on an
advanced Gallium Arsenide Heterojunction Bipolar Tran-
sistor (HBT) process, and has been designed for use as
an easily cascadable 50
include IF and RF amplification in wireless voice and data
communication products operating in frequency bands up
to 2500MHz. The gain flatness over a very wide band-
width makes the device suitable for many applications.
The device is self-contained with 50
impedances and requires only two external DC biasing
elements to operate as specified.
Optimum Technology Matching® Applied
Rev C5 010717
Typical Applicat ions
• General Purpose High Bandwidth Gain
• IF or RF Buffer Amplifiers
Si BJT
Si Bi-CMOS
Blocks
RF IN
GND
GND
VCC
Funct ional Block Diagram
1
2
3
4
ü
GaAs HBT
SiGe HBT
4
gain block. Applications
GaAs MESFET
Si CMOS
input and output
8
7
6
5
RF OUT
GND
GND
GND
WIDEBAND GENERAL PURPOSE AMPLIFIER
• Broadband Test Equipment
• Final PA for Medium Power Applications
• Driver Stage for Power Amplifiers
Feat ures
Ordering Infor mat ion
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
• DC to well over 2500MHz Operation
• Internally Matched Input and Output
• 15dB Small Signal Gain
• 5dB Noise Figure
• +19dBm Output Power
• Single 3.5V to 6V Positive Power Supply
RF2310
RF2310 PCBA
8° MAX
0° MIN
0.196
0.189
xxxxx
xxxxx
xxxxx
0.034
0.016
Package St yle: SOIC-8
Wideband General Purpose Amplifier
Fully Assembled Evaluation Board
0.157
0.150
0.244
0.229
Dimensions in mm
0.009
0.007
0.050
0.018
0.014
RF2310
NOTES:
1. Shaded lead is Pin 1.
2. All dimensions are excluding
3. Lead coplanarity -
mold flash.
0.005 with respect to datum "A".
http://www.rfmd.com
Fax (336) 664 0454
Tel (336) 664 1233
0.008
0.004
0.068
0.053
-A-
4-75
4

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RF2310 Summary of contents

Page 1

... General Purpose High Bandwidth Gain Blocks • Buffer Amplifiers Product Description The RF2310 is a general purpose, low-cost, high linearity RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Tran- sistor (HBT) process, and has been designed for use as an easily cascadable 50 gain block ...

Page 2

... RF2310 Absolute Maximum Ratings Parameter Supply Voltage Input RF Power Storage Temperature Junction Temperature Thermal Resistance, Junction to Case Notes: case reference: pins 5-7, conditions: no signal in and both RF ports terminated average junction temperature measured at 85° C ambient: 143° Parameter Operating Range ...

Page 3

... The supply side of the bias network should also be well bypassed. 100 Rev C5 010717 that provides high impedance at the operating fre- Applicat ion Schemat RF2310 Interface Schematic VCC Bias OUT 100 nH RF OUT 4-77 4 ...

Page 4

... RF2310 P1 SMA 50 strip 330 pF 4-78 Evaluat ion Board Schemat ic (Download Bill of Materials from www.rfmd.com P1 100 pF 330 200 nH OUT 8 SMA 50 strip H3M 1 P1 GND 2310400A P1-3 VCC 3 Rev C5 010717 CC J2 ...

Page 5

... Evaluat ion Board Layout Board Size 2.02” x 2.02” Board Thickness 0.031”, Board Material FR-4 Rev C5 010717 RF2310 4 4-79 ...

Page 6

... MHz S-Parameter Conditions: All plots are taken at ambient temperature=25° C. NOTE: All S11 and S22 plots shown were taken from an RF2310 evaluation board with external input and output tuning compo- nents removed and the reference points at the RF IN and RF OUT pins. 4- Swp Max 3 ...

Page 7

... Vcc=5V 32.0 30.0 28.0 26.0 24.0 22.0 20.0 18.0 60.0 80.0 100.0 -60.0 -40.0 -20.0 67.0 57.0 47.0 37.0 27.0 17.0 Vcc=3V Vcc=5V 7.0 60.0 80.0 100.0 -60.0 -40.0 -20.0 36.0 Vcc=3V 34.0 Vcc=5V 32.0 30.0 28.0 26.0 24.0 22.0 20.0 18.0 60.0 80.0 100.0 -60.0 -40.0 -20.0 RF2310 OIP3 versus Temperature Frequency = 900 MHz Vcc=3V Vcc=5V 0.0 20.0 40.0 60.0 80.0 100.0 Temperature (°C) I versus Temperature CC Frequency = 900 MHz Vcc=3V Vcc=5V 0.0 20.0 40.0 60.0 80.0 100.0 Temperature (°C) OIP3 versus Temperature Frequency = 1950 MHz Vcc=3V Vcc=5V 0.0 20.0 40.0 60.0 80.0 100.0 Temperature (°C) 4-81 4 ...

Page 8

... RF2310 OP1dB versus Temperature Frequency = 1950 MHz 21.0 19.0 17.0 15.0 13.0 11.0 4 9.0 7.0 5.0 -60.0 -40.0 -20.0 0.0 20.0 Temperature (°C) Gain versus Temperature Frequency = 2450 MHz 16.0 15.5 15.0 14.5 14.0 13.5 13.0 12.5 12.0 -60.0 -40.0 -20.0 0.0 20.0 Temperature (°C) OP1dB versus Temperature Frequency = 2450 MHz 19.0 17.0 15.0 13.0 11.0 9.0 7.0 5.0 -60.0 -40.0 -20.0 0.0 20.0 Temperature (°C) 4-82 68.0 58.0 48.0 38.0 28.0 18.0 Vcc=3V Vcc=5V 8.0 40.0 60.0 80.0 100.0 -60.0 -40.0 31.0 29.0 27.0 25.0 23.0 21.0 Vcc=3V 19.0 Vcc=5V 17.0 40.0 60.0 80.0 100.0 -60.0 -40.0 67.0 57.0 47.0 37.0 27.0 17.0 Vcc=3V Vcc=5V 7.0 40.0 60.0 80.0 100.0 -60.0 -40.0 I versus Temperature CC Frequency = 1950 MHz Vcc=3V Vcc=5V -20 ...

Page 9

... Reverse Isolation (S12) of Evaluation Board versus Frequency, Temperature = +25° C -19.5 -20.0 -20.5 -21.0 -21.5 -22.0 -22.5 -23.0 -23.5 -24.0 0.0 500.0 1000.0 1500.0 Frequency (MHz) Rev C5 010717 S22 of Evaluation Board versus Frequency 5.0 4.5 4.0 3.5 3.0 2.5 2.0 Vcc=3V 1.5 Vcc=5V 1.0 2000.0 2500.0 0.0 500.0 Vcc=3.0V Vcc=5.0V 2000.0 2500.0 RF2310 Temperature = +25° C Vcc=3.0V Vcc=5.0V 1000.0 1500.0 2000.0 2500.0 Frequency (MHz) 4-83 4 ...

Page 10

... RF2310 4 4-84 Rev C5 010717 ...

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