TPM1919-60 TOSHIBA Semiconductor CORPORATION, TPM1919-60 Datasheet

TPM1919-60

Manufacturer Part Number

TPM1919-60

Description

Manufacturer

TOSHIBA Semiconductor CORPORATION

Datasheets

1.TPM1919-60.pdf (4 pages)

2.TPM1919-60.pdf (4 pages)

3.TPM1919-60.pdf (4 pages)

4.TPM1919-60.pdf (6 pages)

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MICROWAVE SEMICONDUCTOR

TECHNICAL DATA

FEATURES

RF PERFORMANCE SPECIFICATIONS ( Ta= 25 ° C )

ELECTRICAL CHARACTERISTICS ( Ta= 25 ° C )

Output Power at 1dB Gain

Power Gain at 1dB Gain

Drain Current

Power Added Efficiency

Channel Temperature Rise

Transconductance

Pinch-off Voltage

Saturated Drain Current

Gate-Source Breakdown

Thermal Resistance

Voltage

Compression Point

The information contained herein is presented only as a guide for the applications of our products. No responsibility is

 HIGH POWER

assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,

No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.

The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA

before proceeding with design of equipment incorporating this product.

P1dB=48.0dBm at 1.96GHz

G1dB=13.0dB at 1.96GHz

Recommended gate resistance (Rg) : Rg = 30 Ω (Max.)

HIGH GAIN

CHARACTERISTICS

SYMBOL

ΔTch

th(c-c)

GSoff

DSS

DS1

GSO

1dB

add

Channel to Case

(VDS X IDS + Pin – P1dB)

= 12.0A

= 300mA

= -10.0mA

= 3V

= 0V

CONDITIONS

IDSset≅8.0A

PARTIALLY MATCHED TYPE

HERMETICALLY SEALED PACKAGE

= 1.96GHz

X Rth(c-c)

MICROWAVE POWER GaAs FET

= 12

TPM1919-60

UNIT

° C/W

dBm

° C

MIN.

47.0

12.0

MIN.

-1.0

⎯

-5

Rev. May. 2007

TYP. MAX.

48.0

13.0

12.0

TYP. MAX.

20.0

-1.8

0.6

⎯

15.0

100

-3.0

⎯

0.8

⎯

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