STP15NM65N STMicroelectronics, STP15NM65N Datasheet - Page 5

• Manufacturer Part Number: STP15NM65N
• Description: N-channel 650V - 0.25 Ohm - 15.5A - TO-220/FP - D2/I2PAK - TO-247 Second generation MDmesh Power MOSFET
• Manufacturer: STMicroelectronics

STB15NM65N-STI15NM65N-STF15NM65N-STP/W15NM65N
Table 7.
Table 8.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Symbol
Symbol
I
V
SDM
t
t
I
I
d(on)
d(off)
SD
RRM
RRM
I
Q
Q
t
SD
t
t
t
r
f
rr
rr
rr
rr
(2)
(1)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
Parameter
Parameter
V
R
(see Figure 18)
I
I
di/dt = 100 A/µs
V
(see Figure 20)
I
di/dt = 100 A/µs
V
(see Figure 20)
SD
SD
SD
DD
DD
DD
G
= 4.7 Ω V
= 15.5 A, V
= 15.5 A,
= 15.5 A,
=325 V, I
= 100 V, T
= 100 V, T
Test conditions
Test conditions
GS
D
GS
j
j
= 7.75 A
= 25 °C
= 150°C
= 10 V
= 0
Electrical characteristics
Min
Min
Typ
460
600
Typ
27
27
25
80
26
6
8
8
Max
15.5
Max Unit
1.3
62
Unit
µC
µC
ns
ns
ns
ns
ns
ns
A
A
V
A
A
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