IXGT60N60C2D1 IXYS Corporation, IXGT60N60C2D1 Datasheet
IXGT60N60C2D1
Manufacturer Part Number
IXGT60N60C2D1
Description
IGBT Discretes
Manufacturer
IXYS Corporation
Datasheet
1.IXGT60N60C2D1.pdf
(5 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXGT60N60C2D1
Manufacturer:
IXS
Quantity:
6 000
HiPerFAST
IGBT with Diode
© 2003 IXYS All rights reserved
C2-Class High Speed IGBTs
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
P
T
T
T
M
Weight
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Symbol
V
I
I
V
CM
CES
GES
C25
C110
JM
stg
GEM
J
GE(th)
CE(sat)
CES
CGR
GES
C
d
I
V
V
V
I
Note 1
C
C
GE
CE
CE
Test Conditions
Test Conditions
T
T
Continuous
Transient
T
T
T
V
Clamped inductive load @ V
T
Mounting torque, TO-264
TO-264
PLUS247
C
C
C
GE
C
J
J
= 250 µA, V
= V
= 0 V
= 0 V, V
= 50 A, V
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C (limited by leads)
= 110°C
= 25°C, 1 ms
= 15 V, T
= 25°C
CES
GE
GE
= ±20 V
TM
= 15 V
CE
VJ
= V
= 125°C, R
GE
GE
= 1 MΩ
G
= 10 Ω
T
T
T
T
(T
CE
J
J
J
J
J
Advance Technical Data
= 25°C
= 25°C
= 125°C
= 125°C
≤ 600 V
= 25°C, unless otherwise specified)
IXGK 60N60C2D1
IXGX 60N60C2D1
3.0
Min.
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
I
CM
Typ.
1.13/10 Nm/lb.in.
2.1
1.8
= 100
600
600
±20
±30
300
480
300
150
75
60
10
6
±100
Max.
650
5.0
2.5
5
mA
°C
°C
°C
°C
W
µA
nA
V
V
V
V
A
A
A
A
g
g
V
V
V
Features
•
•
•
•
•
Applications
•
•
•
•
•
Advantages
•
•
V
I
V
t
TO-264 AA
(IXGK)
PLUS247
(IXGX)
G = Gate
E = Emitter
C25
fi(typ)
Very high frequency IGBT and
Square RBSOA
High current handling capability
MOS Gate turn-on for drive simplicity
Fast Recovery Epitaxial Diode (FRED)
with soft recovery and low I
Switch-mode and resonant-mode
power supplies
Uninterruptible power supplies (UPS)
DC choppers
AC motor speed control
DC servo and robot drives
Space savings (two devices in one
package)
Easy to mount with 1 screw
CES
CE(sat)
anti-parallel FRED in one package
G
C
C = Collector
Tab = Collector
E
= 600 V
=
= 2.5 V
=
DS99044A(09/03)
35 ns
75 A
RM
(TAB)
(TAB)
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IXGT60N60C2D1 Summary of contents
Page 1
... HiPerFAST TM IGBT with Diode C2-Class High Speed IGBTs Symbol Test Conditions 25°C to 150°C CES 25°C to 150°C; R CGR J V Continuous GES V Transient GEM 25°C (limited by leads) C25 110°C C110 25° SSOA ...
Page 2
... A; -di/dt = 200 A/ms thJC Note 1: Pulse test, t ≤ 300 µs, duty cycle ≤ IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values (T = 25°C, unless otherwise specified) J Min. ...
Page 3
Fig. 1. Output Characteristics @ 25 Deg 0 Fig. 3. ...
Page 4
... 0mA nanoCoulombs G IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents 200 on I off C º º ...
Page 5
A 140 120 25° 100 T =100° =150° Fig. 12 Forward current I versus V F 2.0 1 ...