IXGT60N60C2D1 IXYS Corporation, IXGT60N60C2D1 Datasheet - Page 3

• Manufacturer Part Number: IXGT60N60C2D1
• Description: IGBT Discretes
• Manufacturer: IXYS Corporation

© 2003 IXYS All rights reserved
1 00
1 00
4.5
3.5
2.5
90
80
70
60
50
40
30
20
90
80
70
60
50
40
30
20
1 .5
1 0
1 0
0
0
5
4
3
2
1
0.5
0.5
5
6
Fig. 5. Collector-to-Emitter Voltage
1
1
Fig. 1. Output Characteristics
Fig. 3. Output Characteristics
7
vs. Gate-to-Emitter voltage
V
G E
8
1 .5
= 1 5V
1 .5
V
1 3V
1 1 V
G E
@ 125 Deg. C
@ 25 Deg. C
V
V
V
9
= 1 5V
CE
CE
GE
1 3V
1 1 V
- Volts
- Volts
- Volts
I
1 0
2
2
C
= 1 00A
1 1
50A
25A
2.5
2.5
9V
T
1 2
5V
7V
J
= 25
9V
1 3
7V
5V
º
3
3
C
1 4
3.5
3.5
1 5
200
200
1 75
1 50
1 25
1 00
1 75
1 50
1 25
1 00
0.9
0.8
0.7
0.6
0.5
75
50
25
1 .2
75
50
25
1 .1
0
0
1
3.5
25
1
Fig. 4. Temperature Dependence of V
V
Fig. 2. Extended Output Characteristics
G E
T
4
1 .5
J
= 1 5V
= 1 25
-40
Fig. 6. Input Admittance
4.5
50
25
º
º
T
C
º
C
J
C
2
V
- Degrees Centigrade
5
G E
@ 25 deg. C
= 1 5V
5.5
V
75
V
1 3V
1 1 V
2.5
GE
CE
IXGK 60N60C2D1
IXGX 60N60C2D1
- Volts
- Volts
6
3
1 00
6.5
I
I
I
3.5
C
C
C
7
= 1 00A
= 50A
= 25A
1 25
7.5
9V
7V
5V
4
CE(sat)
8
4.5
1 50
8.5