BUT11F NXP Semiconductors, BUT11F Datasheet - Page 5

• Manufacturer Part Number: BUT11F
• Description: Silicon Diffused Power Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
August 1997
Silicon Diffused Power Transistor
Fig.11. Typical base-emitter and collector-emitter saturation voltages.
Fig.12. Collector-emitter saturation voltage. Solid lines = typ values,
dotted lines = max values. V
V
BEsat
= f(I
C
); V
CEsat
5
= f(I
CEsat
C
); I
= f(I
C
/I
B
B
); parameter I
= 5
C
Product specification
BUT11F
Rev 1.000