BA278 NXP Semiconductors, BA278 Datasheet - Page 2

• Manufacturer Part Number: BA278
• Description: Ba278 Band-switching Diode
• Manufacturer: NXP Semiconductors

Philips Semiconductors
FEATURES
• Small plastic SMD package
• Continuous reverse voltage: max. 35 V
• Continuous forward current: max. 100 mA
• Low diode capacitance: max. 1.2 pF
• Low diode forward resistance: max. 0.7 Ω.
APPLICATIONS
• Low loss band switching in VHF television tuners.
• Surface mount band-switching circuits.
DESCRIPTION
Planar high performance band-switching diode in a small
plastic SOD523V SMD package.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
ELECTRICAL CHARACTERISTICS
T
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
2001 Jan 15
V
I
P
T
T
V
I
C
r
R
SYMBOL
SYMBOL
SYMBOL
j
F
R
D
stg
j
R
tot
= 25 °C unless otherwise specified.
F
d
th j-s
Band-switching diode
continuous reverse voltage
continuous forward current
total power dissipation
storage temperature
junction temperature
forward voltage
reverse current
diode capacitance
diode forward resistance
thermal resistance from junction to soldering-point
PARAMETER
PARAMETER
PARAMETER
T
I
V
V
f = 1 MHz; V
I
F
F
s
R
R
= 10 mA
= 2 mA; f = 100 MHz; note 1; see Fig.3
= 90 °C
= 25 V
= 20 V; T
2
CONDITIONS
PINNING
R
amb
= 6 V; note 1; see Fig.2
handbook, halfpage
Fig.1
Marking code:
= 75 °C
CONDITIONS
PIN
Simplified outline (SOD523V)
and symbol.
1
2
1
Top view
1
Top view
MBK258
cathode
anode
2
MIN.
−65
−65
2
−
−
−
Preliminary specification
MAM399
DESCRIPTION
+150
+150
VALUE
MAX.
MAX.
50
100
715
1
1
1.2
0.7
35
85
BA278
V
mA
mW
°C
°C
V
nA
µA
pF
Ω
UNIT
UNIT
UNIT
K/W