PEMZ7 NXP Semiconductors, PEMZ7 Datasheet - Page 4

• Manufacturer Part Number: PEMZ7
• Description: Npn/pnp General Purpose Transistors
• Manufacturer: NXP Semiconductors

Philips Semiconductors
CHARACTERISTICS
T
2001 Nov 07
handbook, halfpage
Per transistor; for the PNP transistor with negative polarity
I
I
h
V
f
C
SYMBOL
amb
CBO
EBO
T
FE
CEsat
c
NPN/PNP general purpose transistors
TR1 (NPN); V
(1) T
(2) T
(3) T
Fig.2
h FE
= 25 C; unless otherwise specified.
600
500
400
300
200
100
amb
amb
amb
0
10
= 150 C.
= 25 C.
= 55 C.
1
DC current gain as a function of collector
current; typical values.
collector-base cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation
voltage
transition frequency
collector capacitance
CE
TR1 (NPN)
TR2 (PNP)
TR1 (NPN)
TR2 (PNP)
= 2 V.
1
(1)
(2)
(3)
PARAMETER
10
10
2
I C (mA)
MHC014
10
V
V
V
V
I
I
f = 100 MHz
V
3
C
C
CB
CB
EB
CE
CB
= 200 mA; I
= 100 mA; V
= 15 V; I
= 15 V; I
= 5 V; I
= 2 V; I
= 10 V; I
4
CONDITIONS
C
C
E
E
E
= 0
handbook, halfpage
= 10 mA
B
= 0
= 0; T
= I
CE
= 10 mA
TR1 (NPN); T
(1) I
(2) I
(3) I
(4) I
Fig.3
e
(mA)
= 5 V;
1200
= 0; f = 1 MHz
I C
800
400
B
B
B
B
j
0
= 4.60 mA
= 4.14 mA
= 3.68 mA
= 3.22 mA
= 150 C
0
Collector current as a function of
collector-emitter voltage; typical values.
amb
= 25 C.
2
(5) I
(6) I
(7) I
(8) I
200
250
100
4
B
B
B
B
MIN.
= 2.76 mA
= 2.30 mA
= 1.84 mA
= 1.38 mA
(4)
6
420
280
4.4
(3)
TYP.
Product specification
(2)
(9) I
(10) I
8
(10)
V CE (V)
100
50
100
220
6
10
(1)
(5)
(6)
(7)
(8)
(9)
MAX.
MLD672
B
B
PEMZ7
= 0.92 mA
= 0.46 mA
10
nA
nA
mV
MHz
MHz
pF
pF
UNIT
A