RN1910FE TOSHIBA Semiconductor CORPORATION, RN1910FE Datasheet - Page 2

• Manufacturer Part Number: RN1910FE
• Description: Toshiba Transistor Silicon Npn Epitaxial Type Pct Process Bias Resistor Built-in Transistor
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Input resistor
Characteristics
RN1910FE
RN1911FE
(Ta = 25°C) (Q1, Q2 common)
V
Symbol
CE (sat)
I
I
C
CBO
EBO
h
R1
f
FE
T
ob
V
V
V
I
V
V
C
CB
EB
CE
CE
CB
= 5 mA, I
2
= 50 V, I
= 5 V, I
= 5 V, I
= 10 V, I
= 10 V, I
Test Condition
B
C
C
C
E
E
= 0.25 mA
= 0
= 1 mA
= 0
= 0, f = 1 MHz
= 5 mA
⎯
RN1910FE,RN1911FE
3.29
Min
120
⎯
⎯
⎯
⎯
⎯
7
Typ.
250
0.1
4.7
⎯
⎯
⎯
10
3
2004-07-01
Max
6.11
100
100
700
0.3
13
⎯
6
MHz
Unit
kΩ
nA
nA
pF
V