RN1107FT TOSHIBA Semiconductor CORPORATION, RN1107FT Datasheet - Page 2

• Manufacturer Part Number: RN1107FT
• Description: Toshiba Transistor Silicon Npn Epitaxial Type Pct Process Bias Resistor Built-in Transistor
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter
saturation voltage
Input voltage (ON)
Input voltage (OFF)
Transition frequency
Collector output
capacitance
Input resistor
Resistor ratio
Characteristics
RN1107FT~110T9FT
RN1107FT~1109FT
RN1107FT~1109FT
RN1107FT~1109FT
RN1107FT
RN1108FT
RN1109FT
RN1107FT
RN1108FT
RN1109FT
RN1107FT
RN1108FT
RN1109FT
RN1107FT
RN1108FT
RN1109FT
RN1107FT
RN1108FT
RN1109FT
RN1107FT
RN1108FT
RN1109FT
(Ta = 25°C)
V
V
Symbol
V
R1/R2
CE (sat)
I
I
I
I (OFF)
h
I (ON)
C
CBO
CEO
EBO
R1
f
FE
T
ob
2
V
V
V
V
V
V
I
I
V
V
V
V
f = 1 MHz
C
B
CB
CE
EB
EB
EB
CE
CE
CE
CE
CB
= 5 mA,
= 0.25 mA
Test Condition
= 6 V, I
= 7 V, I
= 15 V, I
= 50 V, I
= 50 V, I
= 5 V, I
= 0.2 V, I
= 5 V, I
= 10 V, I
= 10 V, I
⎯
⎯
C
C
C
C
C
E
B
C
E
C
= 0
= 0
= 10 mA
= 0.1 mA
= 0
= 0
= 0
= 5 mA
= 0,
= 5 mA
RN1107FT~RN1109FT
0.081
0.078
0.167
0.191
0.421
15.4
32.9
1.92
Min
0.7
1.0
2.2
0.5
0.6
1.5
80
80
70
⎯
⎯
⎯
⎯
⎯
7
0.213
0.468
Typ.
2.14
250
0.1
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
10
22
47
3
2004-02-27
0.145
0.311
0.232
0.515
Max
0.15
1.16
28.6
61.1
2.35
100
500
0.3
1.8
2.6
5.8
1.0
2.6
13
⎯
⎯
⎯
⎯
6
MHz
Unit
mA
kΩ
nA
pF
V
V
V