RN4911FE TOSHIBA Semiconductor CORPORATION, RN4911FE Datasheet - Page 3

• Manufacturer Part Number: RN4911FE
• Description: Toshiba Transistor Silicon Pnp?npn Epitaxial Type Pct Process Bias Resistor Built-in Transistor
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Electrical Characteristics
Electrical Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Input resistor
Characteristics
Characteristics
Characteristics
(Ta = 25°C) (Q1)
(Ta = 25°C) (Q2)
(Ta = 25°C) (Q1, Q2 common)
V
V
Symbol
Symbol
Symbol
CE (sat)
CE (sat)
I
I
I
I
C
C
CBO
EBO
h
CBO
EBO
h
R1
f
f
FE
FE
T
ob
T
ob
V
V
V
I
V
V
V
V
V
I
V
V
C
C
CB
EB
CE
CE
CB
CB
EB
CE
CE
CB
= −5 mA, I
= 5 mA, I
3
= −50 V, I
= −5 V, I
= −5 V, I
= −10 V, I
= −10 V, I
= 50 V, I
= 5 V, I
= 5 V, I
= 10 V, I
= 10 V, I
Test Condition
Test Condition
Test Condition
B
C
C
B
C
C
C
E
E
= 0.25 mA
= 0
= 1 mA
E
C
E
= −0.25 mA
= 0
= 0
= 0, f = 1 MHz
= −1 mA
= 5 mA
= 0
= 0, f = 1 MHz
= −5 mA
⎯
Min
120
Min
120
Min
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
7
Typ.
−0.1
Typ.
Typ.
200
250
0.1
⎯
⎯
⎯
⎯
⎯
⎯
10
3
3
RN4911FE
2004-07-01
−100
−100
Max
−0.3
Max
Max
400
100
100
700
0.3
13
⎯
⎯
6
6
MHz
MHz
Unit
Unit
Unit
kΩ
nA
nA
pF
nA
nA
pF
V
V