HY27UH08AG5M Hynix Semiconductor, HY27UH08AG5M Datasheet - Page 15

no-image

HY27UH08AG5M

Manufacturer Part Number
HY27UH08AG5M
Description
16gb Nand Flash
Manufacturer
Hynix Semiconductor
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HY27UH08AG5M-TPCB
Manufacturer:
HYNIX
Quantity:
3 520
Part Number:
HY27UH08AG5M-TPCB
Manufacturer:
MOLEX
Quantity:
4 923
Part Number:
HY27UH08AG5M-TPCB
Manufacturer:
HYNIX
Quantity:
4 000
HY27UH08AG(5/D)M Series
16Gbit (2Gx8bit) NAND Flash
3.5 Read Status Register.
The device contains a Status Register which may be read to find out whether read, program or erase operation is com-
pleted, and whether the program or erase operation is completed successfully. After writing 70h command to the com-
mand register, a read cycle outputs the content of the Status Register to the I/O pins on the falling edge of CE or RE,
whichever occurs last. This two line control allows the system to poll the progress of each device in multiple memory
connections even when R/B pins are common-wired. RE or CE does not need to be toggled for updated status. Refer
to table 13 for specific Status Register definitions. The command register remains in Status Read mode until further
commands are issued to it. Therefore, if the status register is read during a random read cycle, the read command
(00h) should be given before starting read cycles. See figure 10 for details of the Read Status operation.
3.6 Read ID.
The device contains a product identification mode, initiated by writing 90h to the command register, followed by an
address input of 00h. Four read cycles sequentially output the manufacturer code (ADh), and the device code and 3rd
cycle ID, 4th cycle ID, respectively. The command register remains in Read ID mode until further commands are issued
to it. Figure 20 shows the operation sequence, while tables 15 explain the byte meaning.
3.7 Reset.
The device offers a reset feature, executed by writing FFh to the command register. When the device is in Busy state
during random read, program or erase mode, the reset operation will abort these operations. The contents of memory
cells being altered are no longer valid, as the data will be partially programmed or erased. The command register is
cleared to wait for the next command, and the Status Register is cleared to value E0h when WP is high. Refer to table
13 for device status after reset operation. If the device is already in reset state a new reset command will not be
accepted by the command register. The R/B pin transitions to low for tRST after the Reset command is written. Refer
to figure 25.
Rev. 0.6 / Dec. 2006

Related parts for HY27UH08AG5M