HY27UH08AG5M Hynix Semiconductor, HY27UH08AG5M Datasheet - Page 2

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HY27UH08AG5M

Manufacturer Part Number
HY27UH08AG5M
Description
16gb Nand Flash
Manufacturer
Hynix Semiconductor
Datasheet

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Document Title
16Gbit (2Gx8bit) NAND Flash Memory
Revision History
Rev. 0.6 / Dec. 2006
Revision
No.
0.0
0.1
0.2
0.3
Initial Draft.
1) Add HY27UH08AG5M & HY27UH08AGDM Products.
- Texts & figures are added.
2) Change Ac Characteristics
3) Add tCRRH (100ns, Min)
- tCRRH: cache Read RE# High
4) Change 3rd Read ID
- 3rd Read ID is changed to C1h
- 3rd Byte of Device Identifier Table is added.
5) Change NOP
- Number of Partial Program Cycle in the same page is changed to 4.
6) Delete Concurrent Operation.
1) Change AC Characteristics
1) Add ECC algorithm. (1bit/512bytes)
2) Change NOP
3) Correct Read ID naming
4) Change DC characterics
Before
Before
Before
Before
After
After
After
After
tCLS
Typ
30
30
tREA
12
15
20
25
20
25
tR
I
CC1
Max
60
45
tWP
12
15
tCEA
tAR
10
15
35
30
Typ
30
30
I
tDS
CC2
12
15
Max
History
tREA
60
45
tCS
18
20
20
25
tWC
25
30
Typ
30
30
tRHZ
I
CC3
30
50
tADL
Max
100
60
45
70
tCHZ
30
50
tRP
12
15
16Gbit (2Gx8bit) NAND Flash
tCEA
HY27UH08AG(5/D)M Series
25
35
tRC
25
30
Sep. 08. 2005
Nov. 16. 2005
Oct. 08. 2005
Jun. 20. 2006
Draft Date
Preliminary
Preliminary
Preliminary
Remark
Initial

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