HY27UF082G2A Hynix Semiconductor, HY27UF082G2A Datasheet - Page 20

• Manufacturer Part Number: HY27UF082G2A
• Description: 2gb Nand Flash
• Manufacturer: Hynix Semiconductor

Rev 0.4 / Mar. 2007
Operating
Current
Stand-by Current (TTL)
Stand-by Current (CMOS)
Input Leakage Current
Output Leakage Current
Input High Voltage
Input Low Voltage
Output High Voltage Level
Output Low Voltage Leve
Output Low Current (R/B)
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Levels
Output Load (2.7V - 3.6V)
Parameter
Sequential
Read
Program
Erase
Parameter
Table 9: DC and Operating Characteristics
Symbol
(R/B)
I
I
I
I
I
V
V
V
I
I
V
I
CC1
CC2
CC3
CC4
CC5
LO
OH
OL
LI
OL
IH
IL
Table 10: AC Conditions
2Gbit (256Mx8bit/128Mx16bit) NAND Flash
V
V
OUT
Test Conditions
IN=
CE=Vcc-0.2,
I
WP=0V/Vcc
WP=0V/Vcc
=0 to Vcc (max)
I
I
0 to Vcc (max)
OH
V
t
OL
OUT
CE=V
CE=V
RC
OL
=-400uA
=2.1mA
=30ns
=0.4V
=0mA
-
-
-
-
IH
IL
,
,
HY27UF(08/16)2G2A Series
Vccx0.8
1 TTL GATE and CL=50pF
Min
-0.3
2.4
8
-
-
-
-
-
-
-
-
0V to Vcc
3.3Volt
Vcc / 2
Value
3.3Volt
5ns
Typ
15
15
15
10
10
-
-
-
-
-
-
Vcc+0.3
0.2xVcc
± 10
± 10
Max
0.4
30
30
30
50
1
-
-
Unit
mA
mA
mA
mA
mA
uA
uA
uA
V
V
V
V
20