HY27UF084G2M Hynix Semiconductor, HY27UF084G2M Datasheet - Page 19

• Manufacturer Part Number: HY27UF084G2M
• Description: 4gb Nand Flash
• Manufacturer: Hynix Semiconductor

Rev. 0.7 / Dec. 2006
NOTE:
1. The 1st block is guaranteed to be a valid block up to 1K cycles with ECC. (1bit/512bytes)
NOTE:
1. Except for the rating “Operating Temperature Range”, stresses above those listed in the Table “Absolute
2. Minimum Voltage may undershoot to -2V during transition and for less than 20ns during transitions.
Symbol
V
T
the device at these or any other conditions above those indicated in the Operating sections of this specification is
Valid Block Number
T
Maximum Ratings” may cause permanent damage to the device. These are stress ratings only and operation of
not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability.
Vcc
IO
T
BIAS
STG
A
(2)
Parameter
Ambient Operating Temperature (Commercial Temperature Range)
Ambient Operating Temperature (Extended Temperature Range)
Ambient Operating Temperature (Industry Temperature Range)
Temperature Under Bias
Storage Temperature
Input or Output Voltage
Supply Voltage
Symbol
N
VB
Table 7: Absolute maximum ratings
Table 6: Valid Blocks Number
Parameter
4016
Min
Typ
4Gbit (512Mx8bit) NAND Flash
HY27UF084G2M Series
Max
4096
-0.6 to 4.6
-0.6 to 4.6
-50 to 125
-65 to 150
-25 to 85
-40 to 85
0 to 70
Value
3.3V
Blocks
Unit
Unit
℃
℃
℃
℃
℃
V
V
19