PDTA113E NXP Semiconductors, PDTA113E Datasheet - Page 4

• Manufacturer Part Number: PDTA113E
• Description: Pdta113e Series Pnp Resistor-equipped Transistors; R1 = 1 Kohm, R2 = 1 Kohm
• Manufacturer: NXP Semiconductors

Philips Semiconductors
5. Limiting values
6. Thermal characteristics
9397 750 14484
Product data sheet
Table 6:
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
Table 7:
[1]
[2]
[3]
Symbol
V
V
V
V
I
I
P
T
T
T
Symbol
R
O
CM
stg
j
amb
CBO
CEO
EBO
I
tot
th(j-a)
Refer to standard mounting conditions.
Reflow soldering is the only recommended soldering method.
Refer to SOT883 standard mounting conditions; FR4 printed-circuit board with 60 m copper strip line.
Refer to standard mounting conditions.
Reflow soldering is the only recommended soldering method.
Refer to SOT883 standard mounting conditions; FR4 printed-circuit board with 60 m copper strip line.
Limiting values
Thermal characteristics
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
output current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
ambient temperature
Parameter
thermal resistance from
junction to ambient
positive
negative
SOT416
SOT346
SOT883
SOT54
SOT23
SOT323
SOT416
SOT346
SOT883
SOT54
SOT23
SOT323
Rev. 04 — 5 April 2005
PNP resistor-equipped transistors; R1 = 1 k , R2 = 1 k
Conditions
open emitter
open base
open collector
T
Conditions
in free air
amb
25 C
PDTA113E series
[2] [3]
[2] [3]
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Min
-
-
-
-
-
-
65
65
Typ
-
-
-
-
-
-
Max
+10
150
250
250
500
250
200
+150
150
+150
50
50
10
10
100
100
Max
833
500
500
250
500
625
Unit
V
V
V
V
V
mA
mA
mW
mW
mW
mW
mW
mW
C
C
C
Unit
K/W
K/W
K/W
K/W
K/W
K/W
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