PDTA113E NXP Semiconductors, PDTA113E Datasheet - Page 5

• Manufacturer Part Number: PDTA113E
• Description: Pdta113e Series Pnp Resistor-equipped Transistors; R1 = 1 Kohm, R2 = 1 Kohm
• Manufacturer: NXP Semiconductors

Philips Semiconductors
7. Characteristics
Table 8:
T
9397 750 14484
Product data sheet
Symbol
I
I
I
h
V
V
V
R1
R2/R1
C
CBO
CEO
EBO
amb
FE
CEsat
I(off)
I(on)
c
= 25 C unless otherwise specified.
Characteristics
Parameter
collector-base cut-off
current
collector-emitter
cut-off current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
off-state input voltage V
on-state input voltage V
bias resistor 1 (input)
bias resistor ratio
collector capacitance
Conditions
V
V
V
T
V
V
I
V
f = 1 MHz
C
j
CB
CE
CE
EB
CE
CE
CE
CB
= 150 C
= 30 mA; I
= 5 V; I
= 50 V; I
= 30 V; I
= 30 V; I
= 5 V; I
= 5 V; I
= 300 mV; I
= 10 V; I
C
C
C
Rev. 04 — 5 April 2005
B
E
B
B
E
= 0 A
= 40 mA
= 100 A
= 0 A
= 0 A
= 0 A;
= 1.5 mA
= i
C
e
= 20 mA
PNP resistor-equipped transistors; R1 = 1 k , R2 = 1 k
= 0 A;
Min
-
-
-
-
30
-
-
0.7
0.8
-
2
PDTA113E series
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Typ
-
-
-
-
-
-
1
1
-
1.3
1.7
Max
-
-
1.3
1.2
2
100
1
50
4
150
0.5
Unit
nA
mA
mV
V
V
k
pF
A
A
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