MT18HTF25672PZ Micron Semiconductor Products, MT18HTF25672PZ Datasheet

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MT18HTF25672PZ

Manufacturer Part Number
MT18HTF25672PZ
Description
Ddr2 Sdram Rdimm
Manufacturer
Micron Semiconductor Products
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MT18HTF25672PZ-667H1
Manufacturer:
MICRON
Quantity:
11 200
DDR2 SDRAM RDIMM
MT18HTF25672PZ – 2GB
Features
• 240-pin, registered dual in-line memory module
• Fast data transfer rates: PC2-3200, PC2-4200,
• 2GB (256 Meg x 72)
• Supports ECC error detection and correction
• V
• V
• JEDEC-standard 1.8V I/O (SSTL_18-compatible)
• Differential data strobe (DQS, DQS#) option
• 4n-bit prefetch architecture
• Single rank
• Multiple internal device banks for concurrent
• Programmable CAS# latency (CL)
• Posted CAS# additive latency (AL)
• WRITE latency = READ latency - 1
• Programmable burst lengths (BL): 4 or 8
• Adjustable data-output drive strength
• 64ms, 8192-cycle refresh
• On-die termination (ODT)
• Serial presence-detect (SPD) with EEPROM
• Gold edge contacts
• Halogen-free
Table 1: Key Timing Parameters
PDF: 09005aef83dadad1
htf18c256x72pz.pdf - Rev. A 3/10 EN
PC2-5300, or PC2-6400
operation
Speed
Grade
DD
DDSPD
-80E
-800
-667
-53E
-40E
= V
DDQ
= 1.7–3.6V
= +1.8V
Products and specifications discussed herein are subject to change by Micron without notice.
Nomenclature
Industry
PC2-6400
PC2-6400
PC2-5300
PC2-4200
PC2-3200
t
CK
CL = 6
800
800
2GB (x72, ECC, SR) 240-Pin DDR2 SDRAM RDIMM
CL = 5
Data Rate (MT/s)
800
667
667
1
Figure 1: 240-Pin RDIMM (MO-237 R/C H)
CL = 4
Options
• Parity
• Operating temperature
• Package
• Frequency/CL
Module height: 30mm (1.181in)
533
533
553
553
400
Notes:
– Commercial (0°C ≤ T
– Industrial (–40°C ≤ T
– 240-pin DIMM (halogen-free)
– 2.5ns @ CL = 5 (DDR2-800)
– 2.5ns @ CL = 6 (DDR2-800)
– 3.0ns @ CL = 5 (DDR2-667)
Micron Technology, Inc. reserves the right to change products or specifications without notice.
1. Contact Micron for industrial temperature
2. CL = CAS (READ) latency; registered mode
CL = 3
400
400
400
400
400
module offerings.
will add one clock cycle to CL.
2
t
(ns)
12.5
RCD
15
15
15
15
A
C
≤ +85°C)
≤ +85°C)
© 2010 Micron Technology, Inc. All rights reserved.
1
(ns)
12.5
t
15
15
15
15
RP
Marking
Features
None
-80E
-800
-667
P
Z
I
(ns)
t
55
55
55
55
55
RC

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MT18HTF25672PZ Summary of contents

Page 1

... DDR2 SDRAM RDIMM MT18HTF25672PZ – 2GB Features • 240-pin, registered dual in-line memory module • Fast data transfer rates: PC2-3200, PC2-4200, PC2-5300, or PC2-6400 • 2GB (256 Meg x 72) • Supports ECC error detection and correction • +1.8V DD DDQ • 1.7–3.6V DDSPD • ...

Page 2

... Data sheets for the base device can be found on Micron’s Web site. Notes: 2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Con- sult factory for current revision codes. Example: MT18HTF25672PZ-667H1. PDF: 09005aef83dadad1 htf18c256x72pz.pdf - Rev. A 3/10 EN ...

Page 3

Pin Assignments Table 4: Pin Assignments 240-Pin RDIMM Front Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol DQ19 61 REF DQ0 ...

Page 4

Pin Descriptions The pin description table below is a comprehensive list of all possible pins for all DDR2 modules. All pins listed may not be supported on this module. See Pin Assignments for information specific to this module. Table 5: ...

Page 5

Table 5: Pin Descriptions (Continued) Symbol Type SDA I/O RDQSx, Output RDQS#x Err_Out# Output (open drain Supply DD DDQ V Supply DDSPD V Supply REF V Supply SS – NC – NF – NU – RFU PDF: 09005aef83dadad1 ...

Page 6

Functional Block Diagram Figure 2: Functional Block Diagram – 2GB RDIMM V SS RS0# DQS0 DQS0# DM CS# DQS DQS# DQ0 DQ DQ1 U1 DQ DQ2 DQ DQ3 DQ DQS1 DQS1# DM CS# DQS DQS# DQ8 DQ U2 DQ9 DQ ...

Page 7

General Description DDR2 SDRAM modules are high-speed, CMOS dynamic random access memory mod- ules that use internally configured 4 or 8-bank DDR2 SDRAM devices. DDR2 SDRAM modules use DDR architecture to achieve high-speed operation. DDR2 architecture is essentially a 4n-prefetch ...

Page 8

Electrical Specifications Table 6: Absolute Maximum Ratings Symbol Parameter supply voltage relative DDQ DD DDQ Voltage on any pin relative OUT Input leakage current; Any input 0V ...

Page 9

DRAM Operating Conditions Recommended AC operating conditions are given in the DDR2 component data sheets. Component specifications are available on Micron's Web site. Module speed grades cor- relate with component speed grades. Table 7: Module and Component Speed Grades DDR2 ...

Page 10

I Specifications DD Table 8: DDR2 I Specifications and Conditions – 2GB DD Values shown for MT47H256M4 DDR2 SDRAM only and are computed from values specified in the 1Gb (256 Meg x 4) com- ponent data sheet Parameter Operating one ...

Page 11

Register and PLL Specifications Table 9: Register Specifications SSTU32866 devices or equivalent Parameter Symbol DC high-level V Control, command, IH(DC) input voltage DC low-level V Control, command, IL(DC) input voltage AC high-level V Control, command, IH(AC) input voltage AC low-level ...

Page 12

Table 10: PLL Specifications CU877 device or equivalent Parameter Symbol DC high-level V IH input voltage DC low-level V IL input voltage Input voltage (limits high-level V IH input voltage DC low-level V IL input voltage Input ...

Page 13

Serial Presence-Detect For the latest SPD data, refer to Micron's SPD page: www.micron.com/SPD. Table 12: SPD EEPROM Operating Conditions Parameter/Condition Supply voltage Input high voltage: logic 1; All inputs Input low voltage: logic 0; All inputs Output low voltage: I ...

Page 14

Module Dimensions Figure 3: 240-Pin DDR2 RDIMM 2.0 (0.079) R (4X 2.5 (0.098) D (2X) 2.3 (0.091) TYP Pin 1 2.21 (0.087) TYP 1.0 (0.039) TYP 1.0 (0.039) TYP 70.66 (2.782) 45° (4X) U13 U14 Pin 240 3.04 ...

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