MT9HTF12872RHY-53E Micron Semiconductor Products, MT9HTF12872RHY-53E Datasheet
MT9HTF12872RHY-53E
Related parts for MT9HTF12872RHY-53E
MT9HTF12872RHY-53E Summary of contents
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DDR2 SDRAM SORDIMM MT9HTF6472RH – 512MB MT9HTF12872RH – 1GB For component data sheets, refer to Micron’s Web site: Features • 200-pin, small-outline registered dual in-line memory module (SORDIMM) • Fast data transfer rates: PC2-4200, PC2-5300, or PC2-6400 • 512MB (64 ...
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... MT9HTF12872RHY-80E__ MT9HTF12872RHY-800__ 1GB MT9HTF12872RHY-667__ 1GB MT9HTF12872RHY-53E__ 1GB Notes: 1. Data sheets for the base devices can be found on Micron’s Web site. 2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Consult factory for current revision codes. ...
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Pin Assignments and Descriptions Table 5: Pin Assignments 200-Pin SORDIMM Front Pin Symbol Pin Symbol Pin Symbol Pin Symbol DQ18 101 REF 3 DQ0 53 DQ19 103 105 DQ1 57 ...
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Table 6: Pin Descriptions Symbol Type Description A0–A13 Input Address inputs: Provide the row address for ACTIVE commands, and the column address (SSTL_18) and auto precharge bit (A10) for READ/WRITE commands, to select one location out of the memory array ...
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Functional Block Diagram Figure 2: Functional Block Diagram RS0# DQS0# DQS0 DM0 DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQS1# DQS1 DM1 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 DQS2# DQS2 DM2 DQ16 DQ17 DQ18 DQ19 DQ20 DQ21 ...
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General Description The MT9HTF6472RH and MT9HTF12872RH DDR2 SDRAM modules are high-speed, CMOS, dynamic random access 512MB and 1GB memory modules organized in a x72 configuration. These modules use a 512Mb DDR2 SDRAM device with four internal banks or a 1Gb ...
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Electrical Specifications Stresses greater than those listed in Table 7 may cause permanent damage to the module. This is a stress rating only, and functional operation of the module at these or any other conditions outside those indicated on the ...
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I Specifications DD Table 9: DDR2 I Specifications and Conditions – 512MB DD Values are shown for the MT47H64M8 DDR2 SDRAM only and are computed from the values specified in the 512Mb (64 Meg x 8) component data sheet Parameter/Condition ...
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Table 10: DDR2 I Specifications and Conditions – 1GB DD Values are shown for the MT47H128M8 DDR2 SDRAM only and are computed from values specified in the 1Gb (128 Meg x 8) component data sheet Parameter/Condition Operating one bank active-precharge ...
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Register and PLL Specifications Table 11: Register Specifications SSTU32872 devices or equivalent Parameter Symbol high-level IH DC input voltage DC low-level input voltage AC high-level input ...
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Table 12: PLL Specifications CUA845 device or JEDEC82-21 equivalent Parameter Symbol DC high-level input voltage low-level input voltage Input voltage (limits Input differential-pair cross IX voltage Input differential voltage ...
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Temperature Sensor The temperature sensor continuously monitors the module’s temperature and can be read back at any time over the I the “Mobile Platform Memory Module Thermal Sensor Component Specification,” which is found in JEDEC standard JESD21-C. Table 14: Temperature ...
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Serial Presence-Detect Table 16: Serial Presence-Detect EEPROM DC Operating Conditions Parameter/Condition Supply voltage with temperature sensor option Input high voltage: Logic 1; All inputs Input low voltage: Logic 0; All inputs Output low voltage 3mA OUT SPD input ...
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Module Dimensions Figure 3: 200-Pin DDR2 SORDIMM 2.0 (0.079) R (2X) U1 1.0 (0.039) R (2X) 1.8 (0.071) (2X) 6.0 (0.236) TYP Pin 1 2.0 (0.079) TYP U10 3.5 (0.138) TYP Pin 200 1.0 (0.039) TYP Notes: 1. All dimensions ...