MT9HTF12872RHY-53E Micron Semiconductor Products, MT9HTF12872RHY-53E Datasheet - Page 7

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MT9HTF12872RHY-53E

Manufacturer Part Number
MT9HTF12872RHY-53E
Description
512mb, 1gb X72, Ecc, Sr 200-pin Ddr2 Sdram Sordimm
Manufacturer
Micron Semiconductor Products
Datasheet
Electrical Specifications
Table 7:
Input Capacitance
Component AC Timing and Operating Conditions
Table 8:
PDF: 09005aef828742dd/Source: 09005aef82874316
HTF9C64_128x72RH.fm - Rev. B 10/07 EN
V
Symbol
IN
I
V
VREF
T
, V
I
T
OZ
DD
I
C
A
I
1
OUT
Absolute Maximum Ratings
Parameter
V
Voltage on any pin relative to V
Input leakage current; Any input 0V ≤ V
V
test = 0V)
Output leakage current; 0V ≤ V
ODT are disabled
V
Module ambient operating temperature
DDR2 SDRAM component case operating
temperature
Module and Component Speed Grades
DD
REF
REF
supply voltage relative to V
input 0V ≤ V
leakage current; V
Module Speed Grade
Notes:
2
Stresses greater than those listed in Table 7 may cause permanent damage to the
module. This is a stress rating only, and functional operation of the module at these or
any other conditions outside those indicated on the device data sheet is not implied.
Exposure to absolute maximum rating conditions for extended periods may adversely
affect reliability.
1. Refresh rate is required to double when 85°C < T
2. For further information, refer to technical note
Micron encourages designers to simulate the performance of the module to achieve
optimum values. Simulations are significantly more accurate and realistic than a gross
estimation of module capacitance when inductance and delay parameters associated
with trace lengths are used in simulations. JEDEC modules are currently designed using
simulations to close timing budgets.
Recommended AC operating conditions are given in the DDR2 component data sheets.
Component specifications are available on Micron’s Web site. Module speed grades
correlate with component speed grades, as shown in Table 8.
-80E
-800
-667
-53E
IN
on Micron’s Web site.
≤ 0.95V (All other pins not under
REF
512MB, 1GB (x72, ECC, SR) 200-Pin DDR2 SDRAM SORDIMM
=
V
alid V
OUT
SS
SS
≤ V
REF
DD
level
IN
Q; DQ and
≤ V
DD
7
;
Address inputs
RAS#, CAS#, WE#, S#,
CKE, ODT, BA
CK0, CK0#
DM
DQ, DQS, DQS#
Commercial
Industrial
Commercial
Industrial
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Component Speed Grade
TN-00-08: “Thermal
C
≤ 95°C.
Electrical Specifications
-25E
-37E
-25
-3
–250
Min
–0.5
–0.5
–18
–40
–40
–5
–5
–5
©2007 Micron Technology, Inc. All rights reserved.
0
0
Applications,” available
Max
+250
+2.3
+2.3
+18
+70
+85
+85
+95
+5
+5
+5
Units
µA
µA
µA
°C
°C
°C
°C
V
V

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