CMF02 TOSHIBA Semiconductor CORPORATION, CMF02 Datasheet - Page 2

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CMF02

Manufacturer Part Number
CMF02
Description
Toshiba Fast Recovery Diode Silicon Diffused Type
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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Electrical Characteristics
Marking
Handling Precautions
Thermal resistance between junction and ambient fluctuates depending on the mounting condition of the device. When
using the device, be sure to design the circuit board and soldering land size to match the appropriate thermal resistance
value.
Refer to the Rectifier databook for further information.
Peak forward voltage
Repetitive peak reverse current
Reverse recovery time
Forward recovery time
Thermal resistance
Thermal resistance (junction to lead)
Abbreviation Code
F2
Characteristic
CMF02
Part No.
(Ta
Symbol
R
R
I
V
th (j-a)
25°C)
RRM
th (j-)
trr
tfr
FM
I
V
I
I
Device mounted on a ceramic board
(board size: 50 mm u 50 mm)
(soldering land: 2 mm u 2 mm)
(board thickness: 0.64 t)
Device mounted on a glass-epoxy
board
(board size: 50 mm u 50 mm)
(soldering land: 6 mm u 6 mm)
(board thickness: 1.6 t)
Device mounted on a glass-epoxy
board
(board size: 50 mm u 50 mm)
(soldering land: 2.1 mm u 1.4 mm)
(board thickness: 1.6 t)
FM
F
F
RRM
= 1 A, di/dt é-30 A/ôs
= 1 A
x x
x x
1.0 A (pulse test)
2
600 V (pulse test)
Standard Soldering Pad
Test Condition
1.4

3.0
x
x
Min








1.4
Unit: mm
Typ.
270







2007-04-16
Max
100
135
210
2.0
50
60
16

CMF02
°C/W
°C/W
Unit
A
ns
ns
V

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